Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
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概要
- 論文の詳細を見る
The incorporation of impurities into single crystal layers of Ge grown by the disproportionation reaction 2GeI_2⇄Ge+GeI_4, is studied thermodynamically. Impurity iodides formed in the source region are carried over substrate wafers where impurity atoms are liberated mainly through the reduction by Ge or GeI_2. The amount of impurity incorporated depends largely upon the yields of reactions involved in the doping process, and the analysis leads to the conclusion that Sb, P and As are favorable as donor impurities while Ga, In and BI_3 as acceptor impurities.
- 社団法人応用物理学会の論文
- 1963-10-15
著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Arizumi T.
Department of Electronics, Faculty of Engineering Nagoya University
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