Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
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概要
- 論文の詳細を見る
In the reaction between iodine vapor and Ge, the latter is etched away mainly as GeI_2 at temperature between 450° and 550℃. The rate of this reaction is not determined by the supply of positive holes. The relative reactivities of three crystallographic surfaces are in the order: {110}>{111}>__-{100}, which is the same order as the densities of surface atoms. Thus {100} and {111} planes of slower etching rate are always revealed and pyramidal pits of two-, three- and four-fold symmetries are developed on the surfaces {110}, {111} and {100}, respectively. A triangular pit formed on the (111) surface is regarded as a positive pit and it does not always correspond to a dislocation.
- 社団法人応用物理学会の論文
- 1963-03-15
著者
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Akasaki Isamu
Department Of Electronics Faculty Of Engineering Nagoya University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Arizumi T.
Department of Electronics, Faculty of Engineering Nagoya University
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