Electron Microscope Investigation of Structures of Amorphous Germanium Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-03-05
著者
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Noda Mikio
Department of Integrated Natural Sciences, Aichi University of Education
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
関連論文
- Formation of Diamond Films by Intermittent DC Plasma Chemical Vapor Deposition Using Subelectrode
- ESR Centers in Silicon Monoxide
- Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
- Theory of Tunneling into Impurity Band
- Microstructures of Hydrogenated Silicon Films Prepared by Ion Plating
- Electron Microscope Investigation of Structures of Amorphous Germanium Films
- Electron Microscope Investigation of Structural Changes in Amorphous GeSe_2 Films
- Microwave Conductivity and Relaxation of Excess Phonons in CdS
- Mechanism of Off-Axis Domain Formation and Current Anomaly in Semiconducting CdS
- Light Emission Associated with High Field Domains in Semiconducting CdS
- Correction to "Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS"
- Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS
- Formation of Diamond Films by Intermittent Discharge Plasma Chemical Vapor Deposition ( Plasma Processing)
- Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition
- Effect of Discharge Current on the Microstructure of Diamond Films Deposited on Aluminum Substrate at Low Substrate Temperature by DC Plasma CVD
- Deposition of Diamond onto an Aluminum Substrate by DC Plasma CVD
- Effect of Magnetic Field on Density Distribution of Injected Plasma in Semiconductor Rods
- Density Distributions of Injected Plasma along the Length of Semiconductor Rods
- Epitaxial Vapor Growth of Gallium Antimonide
- Sheet Resistivity of the Epitaxially Grown Germanium Layer
- Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
- Electrothermal Effects in Chalcogenide Glass Semiconductors
- ESR Study on Surface Properties of Semiconductor. : II. III-V Compounds (GaAs, GaSb and InSb)
- The Doppler Effects of the Drifting Plasma in Semiconductors
- The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask
- A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
- Preparation and Electrical Properties of GaSb-Ge Heterojunctions by Vapor Growth Technique
- High Reverse Currents of GaSb and GaAs Tunnel Diodes
- Negative Resistance Due to Impact Ionization in Irradiated Germanium
- Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation
- Spiral Delay Line of SH_0 Wave Guided on PZT Disk
- Finite Element Method Analysis of a Shear Horizontal Wave Guided in a Piezoelectric Plate
- Guided Shear Horizontal Wave in a PZT Ceramic Plate
- A Supplement to "Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge"
- Etch Patterns and Dislocation Etch Pits on Germanium with KI-I_2 Redox System
- Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
- Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
- Incubation Time of Acoustoelectric Domain in n-InSb
- Decay of Acoustoelectric Domain and Microwave Emission in n-InSb
- Two Different Modes Acoustoelectric Oscillation and Microwave Emission from n-InSb
- Microwave Emission from Acoustoelectrically Oscillating n-InSb
- Oscillistors in a Locally Concentrated Magnetic Field
- Oscillation Modes of Oscillistors I : Uniform Magnetic Field.
- Theory of Plasma Spreading Velocity in a Thyristor
- Tunneling Spectroscopic Study of the Impurity Band of (000) Valley of Germanium
- Tunneling through Band Tail States
- Uniaxial Stress Effect on Subsidiary Band Minima of GaSb from Zero Bias Conductance Anomaly
- Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium
- Oscillation Modes of Oscillistors II : Locally Concentrated Magnetic Field
- Etch Patterns in Germanium
- On the Structural Properties of Vapor-Deposited Germanium Layers
- Experimental Studies of Impurity Doping in Vapor Growth of Ge
- A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor
- Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
- Transport Reaction in Closed Tube Process
- Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process
- Electrical Properties of Chalcogenide Glasses of Te-Se-Ge and Te-Se-Sb Systems
- Thermal Switching in Chalcogenide Glass Semiconductors
- Difference of Thermal Properties between Threshold Type and Memory Type Chalcogenide Glass Semiconductors
- Crystallization Rates of the Chalcogenide Glasses by Heat Treatment
- Dependences of the Resistivity and the Switching on Composition in Chalcogenide Glasses
- Injected Carrier Instability in High Electric Field
- Intervalley Transfer in Uniaxially Strained n-Type Ge
- Electric-Field Dependent Motion of Acoustic Domain in n-InSb
- Uniaxial Stress Effect on p^+-n Si-Ge Alloyed Heterojunction Characteristics
- Transport Mechanism of Alloyed p^+-n Heterojunctions with Relatively Heavy Doping
- Transport Properties of Metal-Silicon Schottky Barriers
- Contact Properties of Metal-Silicon Schottky Barriers
- Au-Cu Alloy and Ag-Cu Alloy-Silicon Schottky Barriers
- The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method
- Frequency Shift of a Tunnel-Diode Microwave Oscillator
- Anomalous Junction Capacitance in Tunnel-Diodes
- Barrier Capacitance and Built-in Voltage of Tunnel Diodes
- Moving High-Field Domain and Current Saturation in Optically Excited n-InSb
- The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski Method
- The Numerical Analyses of the Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. : Part II. Effects of the Crucible Rotation
- Damping Mechanism of Acoustoelectric Oscillation and the Effect of Hole-Injection in n-InSb
- Time Evolution of Frequency Spectrum in CdS with Acousto-Electrically Amplified Phonon Flux
- Frequency-Dependence of Lattice Attenuation in CdS with Acoustic Domain
- Magnetic Scattering in Germanium Tunnel Diode
- Au-Ag Alloy-Silicon Schottky Barriers
- Uniaxial Stress Effect on the (000) Valley of As-Doped Ge