Density Distributions of Injected Plasma along the Length of Semiconductor Rods
スポンサーリンク
概要
- 論文の詳細を見る
The distribution of the high plasma density along the length of a long semiconductor rod of small radius is discussed theoretically, introducing the surface recombination rate. Assumptions used here are that there exists a high level injection only at one end of the semiconductor rod, that the diffusion current is much smaller than the drift current and that the radius of sample is much smaller than twice the diffusion length in the bulk of the sample with relatively small surface recombination velocity. The theory is in fairly good agreement with the experiments.
- 社団法人日本物理学会の論文
- 1965-10-05
著者
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronics Nagoya University
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Horiba Yasutaka
Department Of Electronics Nagoya University
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Horiba Yasutaka
Department Of Electrical Engineering Faculty Of Engineering Kansai University
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronics Nagoya University
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Horiba Yasutaka
Department of Electrical Engineering and Computer Science, Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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