Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-05-20
著者
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Imori Toru
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology:central Research La
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Soga Takashi
Central Research Laboratory Hitachi Limited
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HATTORI Shuzo
Department of Electronics, Faculty of Engineering, Nagoya University
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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