Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
-
SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
-
UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
-
Rusop M
Nagoya Inst. Technol. Nagoya Jpn
-
Rusop Mohamad
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
-
JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
-
Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
-
Umeno M
Department Of Electronic Engineering Chubu University
-
Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
-
Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
-
Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
-
Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
-
Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
-
Umeno M
Fukui Univ. Technol. Fukui Jpn
-
Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
SHIRATA Tetsuya
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
-
Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
Umeno Masataka
Graduate School Of Engineering Osaka University
-
Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
-
Umeno Masayoshi
Department Of Electronic Engineering Chubu University
-
Jimbo T
Ulvac Inc. Shizuoka Jpn
-
Shirata T.
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
-
Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
-
Umeno M
Nagoya Inst. Technology
-
Shirata Tetsuya
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
-
Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
関連論文
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
- Functionalized Carbon Nanotubes for Mixed Matrix Membrane
- Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- Initial Condition and Calculation Method for the Numerical Simulation of LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
- Effects of Al content on Zn_Mg_O Thin Films Deposited by Sol-Gel Spin Coating
- Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- Brillouin Scattering in Sodium Nitrite
- Brillouin Scattering in Ca_2Sr(C_2H_5CO_2)_6
- Photoconductivity Due to Inter-Valence Band Transition in p-Type Germanium
- Anisotropic Properties of Photon Drag Effect in p-type Germanium
- Functionalized Carbon Nanotubes for Mixed Matrix Membrane
- Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
- High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
- Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
- Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
- Photon-Drag Effect Due to the Transitions between Light-Hole Band and Split-Off Band in Ge
- Measurement of Subnanosecond Infra-Red Light Pulses by Photon-Drag Effect : Short Pulses of Light
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Measurement of Surface Patterns by Using Interference of Diffraeted Laser Beam
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- InGaAsP/InP Wavelength Division Solar Cells : II-3: NEW STRUCTURE AND ADVANCED MATERIAL SOLAR CELLS
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- Properties of Pulsed-laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO_2|Dye|CuI Solid-State Photovoltaic Solar Cells
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
- Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
- Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
- Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
- Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
- High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- Synthesis of Iron Oxide Nanoparticles by Using Eucalyptus Globulus Plant Extract