AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-01-15

著者

• Kazi Zaman

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electronic Mechanical Engineering Nagoya University

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Graduate School Of Engineering Osaka University

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Umeno M

  Nagoya Inst. Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

関連論文

• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric (Electron devices)
• First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
• Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
• Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
• Vacuum Ultraviolet Light Source Using Electrodeless Discharge
• Vacuum Ultraviolet Detector
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
• Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
• InGaAsP/InP Native Oxide Stripe Lasers
• InGaAsP/InP Double-Heterostructure Photodiodes
• Brillouin Scattering in Sodium Nitrite
• Brillouin Scattering in Ca_2Sr(C_2H_5CO_2)_6
• Photoconductivity Due to Inter-Valence Band Transition in p-Type Germanium
• Anisotropic Properties of Photon Drag Effect in p-type Germanium
• High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
• Photon-Drag Effect Due to the Transitions between Light-Hole Band and Split-Off Band in Ge
• Measurement of Subnanosecond Infra-Red Light Pulses by Photon-Drag Effect : Short Pulses of Light
• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Measurement of Surface Patterns by Using Interference of Diffraeted Laser Beam
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• InGaAsP/InP Wavelength Division Solar Cells : II-3: NEW STRUCTURE AND ADVANCED MATERIAL SOLAR CELLS
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ellipsometric Studies on Sputter-Damaged Layer in n-InP
• Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
• Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
• High-Temperature Behaviors of GaN Schottky Barrier Diode
• Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
• First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
• Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
• First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
• Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
• New Technique to Fabricate Stress-Relieved Reliable Lasers on Si Substrates
• Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition
• Optical Absorption and Photoluminescence Studies of n-type GaN
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
• Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
• Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
• Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
• Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
• Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Microwave Conductivity and Relaxation of Excess Phonons in CdS
• Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
• Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
• Computer Controlled Precise Positioning for Electromagnetic Linear Motor with Correction of Periodic Error
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of GaAs, InP and GaP
• Characterization of Strained GaP/Si Heterostructure by Spectroscopic Ellipsometry
• Brillouin Scattering of Thermal Phonons in CdS
• Determination of the Absolute Values of Energy Density of Acoustoelectrically Built-Up Phonons in CdS by Brillouin Scattering
• GaAs/AlGaAs Single Quantum Well Optical Switch Fabricated on Si Substrate
• High Efficiency Monolithic GaAs/Si Tandem Solar Cell Grown by Metalorganic Chemical Vapor Deposition
• Al_xGa_As/Si (r=0-0.22) Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
• High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
• Effect of Magnetic Field on Density Distribution of Injected Plasma in Semiconductor Rods
• Density Distributions of Injected Plasma along the Length of Semiconductor Rods
• Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
• Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
• AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
• Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment

もっと見る 閉じる

スポンサーリンク