Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment

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概要

• 論文の詳細を見る

• The effect of selenium sulphide (SeS_2) treatment for GaAs grown on Si has been studied. The surface and bulk properties such as the photoluminscence intensity and minority carrier life-time have been significantly increased. The PL intensity showed a two fold and four fold increase for the as-passivated, passivated and annealed samples. It is proposed that the passivation on the surface occurs by means of sulphur and selenium atoms. The bulk passivation is by means of diffusion of Se into the bulk of the epilayer. Additional steps of annealing increased the minority carrier life time thereby reducing the recombination velocity and also indiffusion of Se helps to passivate the buried defects such as As_<Ga> in the double heterostructures. Results obtained by X-ray photoelectron spectroscopy (XPS) reveal that sulfides and selenides reside on the outermost surface and only gallium based selenides are in the bulk of the GaAs layer.

• 社団法人応用物理学会の論文
• 1999-12-15

著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electronic Mechanical Engineering Nagoya University

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Graduate School Of Engineering Osaka University

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• Umeno Masayoshi

  Department Of Electronic Engineering Chubu University

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• AROKIARAJ Jesudoss

  Department of Environmental Technology and Urbon Planning, Nagoya Institute of Technology

• Umeno M

  Nagoya Inst. Technology

• Arokiaraj Jesudoss

  Research Center For Microstructure Devices Nagoya Institute Of Technology

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

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