Umeno M | Nagoya Inst. Technology
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概要
関連著者
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Umeno Masataka
Graduate School Of Engineering Osaka University
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Umeno Masayoshi
Department Of Electronic Engineering Chubu University
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Soga Takashi
Central Research Laboratory Hitachi Limited
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Zhao Guang-yuan
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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趙 廣元
名古屋工業大学・ベンチャー・ビジネス・ラボラトリー
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UMENO Masayoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Hasegawa Y
Asahi Technical Lab. Co. Shizuoka Jpn
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YU Guolin
Nagoya Institute of Technology
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SOGA Tetsuo
Instrument and Analysis Center, Nagoya Institute of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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NAKADA Naoyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Nakada N
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Soga Tetsuo
Instrument And Analysis Center Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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TAGAWA Masahito
Department of Mechanical Engineering, Kobe University
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Ohmae Nobuo
Department of Mechanical Engineering, Faculty of Engineering, Kobe University
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Ohmae Nobuo
Department Of Mechanical Engineering Faculty Of Engineering Kobe University
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UMENO Masataka
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Tagawa Masahito
Department Of Mechanical Engineering Faculty Of Engineering Kobe University
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Umeno Masataka
Department Of Applied Physics Faculty Of Engineering Osaka University
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WANG Gang
Department of Dermatology of Xijing Hospital, Fourth Military Medical University
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Wang Gang
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Wang Gang
Beijing Astronomical Observatory Chinese Academy Of Sciences
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Wang Gang
Changchun Institute Of Optics Fine Mechanics And Physics Chinese Academy Of Sciences.
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Wang Gang
Faculty Of Agriculture Shizuoka University
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Hayashi Y
Hadepartment Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Kinoshita Hiroshi
Department of Mechanical Engineering, Faculty of Engineering, Kobe University
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NAKAMURA Kouichi
Department of Morphological Brain Science, Graduate School of Medicine, Kyoto University
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EBISU Hiroshi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Ebisu H
Department Of Physics Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Department of Internal Medicine, Anjo Kosei Hospital
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Kinoshita Hiroshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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YU Guolin
Research Centerfor Micro-Structure Devices, Nagoya Institute of Technology
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KAWAZU Satoru
Department of Electronics and Photonic Systems Engineering, Kochi University of Technology
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Yamamoto H
Sharp Corp. Nara Jpn
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Yamamoto H
College Of Science And Technology Nihon University
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Kawazu S
Department Of Electronics And Photonic Systems Engineering Kochi University Of Technology
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MASHIKO Yoji
ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation
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Mashiko Y
Mitsubishi Electric Corp. Hyogo Jpn
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Yamamoto Hidekazu
ULSI Development Center, Mitsubishi Electric Corporation
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Kazi Zaman
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hayashi Yasuhiko
Department Of Cardiovascular Physiology And Medicine Hiroshima University Graduate School Of Biomedi
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Ebisu Hiroshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Watanabe Junji
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Nakamura K
Tokyo Electron Ltd. Tokyo Jpn
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao C
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shirata T.
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Watanabe J
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Hasegawa Yoshiaki
Department Of Periodontology School Of Dentistry Aichi-gakuin University
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Katayama Toshiharu
Graduate School of Engineering, Osaka University
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Ikeno Masahiko
ULSI Development Center, Mitsubishi Electric Corporation
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Ikeno Masahiko
Ulsi Development Center Mitsubishi Electric Corporation
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ZHAO Guang
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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OGAWA Akira
Department of Neurosurgery, Iwate Medical University School of Medicine
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RAHMAN Md.
Nagoya Institute of Technology
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Rusop M
Nagoya Inst. Technol. Nagoya Jpn
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Rusop Mohamad
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Ogawa Takashi
Departments Of Cardiology Tokyo Medical University
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Ohtsuka K
Sanken Electric Co. Ltd. Niiza Jpn
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Ogawa Tohru
Technology Strategy Development Sony Co. Core Technology & Network Company
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HAO Maosheng
Department of Electrical and Electronic Engineering, The University of Tokushima
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Tian Xuemm
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Nakada Naoyuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hao Maosheng
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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JIANG Hao
Department of Radiation Medicine, Faculty of Naval Medicine, Second Military Medical University
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Ogawa A
Shizuoka Univ. Shizuoka‐shi Jpn
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Jiang H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jiang Hao
Department Of Mathematics Xixi Campus Of Zhejiang University
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Tian Xuemin
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Shao Chunlin
Department Of Ion Beam Bioengineering Institute Of Plasma Physics Academia Sinica
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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Nakaji Masaharu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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LIANG Junwu
Institute of Semiconductors, Chinese Academy of Sciences
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YAMAMOTO Ryo
Department of Emergency & Critical Care Medicine, School of Medicine, Keio University
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Yonehara Takao
Eltran Project R&d Headquarters Canon Inc.
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Minton Timothy
Department Of English Nippon Medical School
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Minton Timothy
Department Of Chemistry And Biochemistry Montana State University
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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EBISU Hiroshi
Nagoya Institute of Technology
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SOGA Tetsuo
Nagoya Institute of Technology
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JIMBO Takashi
Nagoya Institute of Technology
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UMENO Masayoshi
Nagoya Institute of Technology
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Mosaddeq-ur-RAHMAN Md.
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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TIAN Xuemm
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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HAYASHI Yasuhiko
HADepartment of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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HAGIMOTO Kouji
Department of Environmental and Urban Planning, Nagoya Institute of Technology
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KALAGA Murali
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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WATANABE Keisuke
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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AGATA Yasunori
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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SATO Nobuhiko
ELTRAN Project, R&D Headquarters, Canon Inc.
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Agata Y
Nagoya Inst. Technol. Nagoya Jpn
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Agata Yasunori
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hagimoto K
Department Of Environmental And Urban Planning Nagoya Institute Of Technology
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ZHANG Baijun
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Saravanan S
Research Center For Micro-structure Devices Nagoya Insititute Of Technology
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Yamamoto Ryo
Department Of Biological Sciences Graduate School Of Science The University Of Tokyo
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Kalaga Murali
Research Center For Micro-structure Devices Nagoya Institute Of Technology:semiconductor Laboratory
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Krishna Kalaga
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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ITO TSUYOSHI
Department of Agricultural Chemistry, Faculty of Agriculture, Okayama University
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Ogawa T
Faculty Of Engineering Takushoku University
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TAGUCHI Hironori
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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SHIRATA Tetsuya
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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ADACHI Mitsuhiro
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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TIAN Xuemin
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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MISHRA Dillip
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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EMA Tatsuhiko
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Ema Tatsuhiko
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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KATAYAMA Toshiharu
ULSI Laboratory, Mitsubishi Electric Corporation
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Yokota Kumiko
Department Of Mechanical Engineering Faculty Of Engineering Kobe University
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Umeno Masayoshi
Nagoya Inst. Of Technology
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YANG Mingju
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Sato Nobuhiko
Eltran Business Center Canon Inc.
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Sato Nobuhiko
Eltran Project R&d Headquarters Canon Inc.
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SHIOTA Tadashi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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KIBI Sinji
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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SUETOMI Toru
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Suetomi Toru
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hagimoto Kouji
Department Of Environmental And Urban Planning Nagoya Institute Of Technology
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NAKADA Naoyuki
1Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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MORI Masayoshi
1Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ZHAO Guan-Yuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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THILAKAN Periyasamy
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Mominuzzaman Sharif
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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RAHMAN Md.
venture Business Laboratory, Nagoya Institute of Technology
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Ogawa Tetsuya
Institute For Chemical Research Kyoto University
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Adachi Mitsuhiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Saravanan Shanmugam
Research Center For Micro-structure Devices Nagoya Insititute Of Technology
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Mosaddeq-ur-rahman Md.
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Arulkumaran Subramaniam
Research Center For Nano-device And System Nagoya Institute Of Technology
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Mishra Dillip
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Shao Chun
Department Of Electrical And Electronic Engineering Tokushima University:textile Engineering Institu
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Ito Tsuyoshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ito Tsuyoshi
Department Of Agricultural Chemistry Faculty Of Agriculture Okayama University
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Zhang B
Research Center For Nano-device And System Nagoya Institute Of Technology
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Yonehara Takao
Eltran Business Center Canon Inc.
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MURASE Kosuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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HORI Kengo
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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ZHAO Guangyuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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EGAWA Takasi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Hori Kengo
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Murase Kosuke
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Dong Jie
Nippon Sanso Corporation Tsukuba Laboratories
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Kibi Sinji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Yang M
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Zhang Baijun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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KOYAMA Hiroshi
ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation
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Shiota Tadashi
Department Of Metallurgy And Ceramics Science Graduate School Of Science And Engineering Tokyo Insti
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IZUMI Katsutoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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NAKASIMA Kenshiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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UMENO Masayoshi
Enviromental Technology and Urbane Planning, Nagoya Institute of Technology
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WANG Yutian
Institute of Semiconductors, Chinese Academy of Sciences
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Wang Yutian
Institute Of Semiconductors Chinese Academy Of Sciences
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Watanabe Keisuke
Department Of Cardiovascular Medicine Graduate School Of Medical Sciences Kumamoto University
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FUJII Yasunori
Department of Physics, College of Science and Engineering Nihon University
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NAKATA Naoyuki
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Guang
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Gangyuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ISHIKAWA Hiroyasu
The authors are with Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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NAKADA Naoyuki
The authors are with the Department of Electrical and Computer Engineering, Nagoya Institute of Tech
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NAKAJI Masaharu
The authors are with the Department of Electrical and Computer Engineering, Nagoya Institute of Tech
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ZHAO Guang-Yuan
The authors are with the Department of Electrical and Computer Engineering, Nagoya Institute of Tech
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EGAWA Takashi
The authors are with Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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JIMBO Takashi
The author is with the Department of Environmental Technology and Urban Planning, Nagoya Institute o
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UMENO Masayoshi
The authors are with Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Guang-Yuan
Venture Business Laboratory, Nagoya Institute of Technology
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ZHAO Guang
Satellite Venture Business Laboratory, Nagoya Institute of Technology
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OHTSUKA Kiyosi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ZHAO Guang-Yuan
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ZHAO G.Y.
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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AROKIARAJ Jesudoss
Electrical and Computer Engineering, Nagoya Insititute of Technology
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UMENO Masayoshi
Electrical and Computer Engineering, Nagoya Insititute of Technology
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ZHENG Lianxi
Institute of Semiconductors, Chinese Academy of Sciences
著作論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
- Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
- Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
- Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
- Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
- Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
- Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of GaAs, InP and GaP
- High Efficiency Monolithic GaAs/Si Tandem Solar Cell Grown by Metalorganic Chemical Vapor Deposition
- MOCVD Growth and Evaluation of GaAs on p+n-Si and n+p-Si Substrates
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
- 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
- Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
- Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure