Ishikawa Hiroyasu | Nagoya Inst. Of Technol. Nagoya Jpn
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概要
関連著者
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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Ishikawa H
Kddi R&d Laboratories Inc.
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Arulkumaran S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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EGAWA T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA H.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Egawa T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Sasaki T
Kawasaki Medical School Okayama Jpn
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Sasaki T
Department Of Biological Sciences Graduate School Of Science University Of Tokyo
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Jimbo T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sasaki Tetsuo
Research Laboratory Zenyaku Kogyo Co. Ltd.
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Kamoda S.
Department Of Biological Sciences Graduate School Of Science University Of Tokyo.
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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Masui S.
Dept Biol. Sci. Grad School Sci. Univ. Tokyo
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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JIMBO Takashi
Nagoya Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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NAKAMURA Kouichi
Department of Morphological Brain Science, Graduate School of Medicine, Kyoto University
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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JIANG Hao
Research Center for Nano-Device and System, Nagoya Institute of Technology
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SHAO Chunlin
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Graduate School Of Engineering Osaka University
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Sasaki T.
Department of Physics, Yamagata University
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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Nakamura K
Tokyo Electron Ltd. Tokyo Jpn
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Murata T
Matsushita Electric Industrial Co. Ltd.
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Egawa Takashi
Nagoya Institute Of Technology
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
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Masui S.
Department of Biological Sciences, Graduate School of Science, University of Tokyo.
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Kamoda S.
Department of Biological Sciences, Graduate School of Science, University of Tokyo.
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Ishikawa H.
Department of Biological Sciences, Graduate School of Science, University of Tokyo.
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Jiang H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Umeno M
Nagoya Inst. Technology
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Nakamura Kouichi
Department Of Morphological Brain Science Graduate School Of Medicine Kyoto University:core Research
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Nakamura Kouichi
Department Of Civil And Environmental Engineering Nagaoka University Of Technology
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Sasaki T.
Department Of Physics Yamagata University
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Sasaki T.
Department of Mechanical Engineering, Kyoto University
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Sasaki T.
Department of Fisheries, Faculty of Agriculture, Tohoku University
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Sasaki T.
Dept. Perinato-gynecology, Kagawa Med. Sch.,
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Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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DOU Yanbo
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ZHANG Baijun
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Sasaki T.
Dept. Of Perinato-gynecology Kagawa Medical School
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NAKADA Naoyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Nakada N
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nakada Naoyuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Shibata Tomohiko
Rd Center Ngk Insulators Ltd.
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MORI Masayoshi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Inoue Kaoru
Chitose Institute Of Science And Technology
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Zhang B
Research Center For Nano-device And System Nagoya Institute Of Technology
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Masui S.
Dept Biol. Sci., Grad School Sci., Univ. Tokyo
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Kuroiwa H.
Dept Biol. Sci., Grad School Sci., Univ. Tokyo
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Sasaki T.
Dept Biol. Sci., Grad School Sci., Univ. Tokyo
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Inui M.
Dept Biol. Sci., Grad School Sci., Univ. Tokyo
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Kuroiwa T.
Dept Biol. Sci., Grad School Sci., Univ. Tokyo
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Ishikawa H.
Dept Biol. Sci., Grad School Sci., Univ. Tokyo
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Kamoda S.
Dept. Biol. Sci., Grad. School of Science, Univ. of Tokyo
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Ishikawa H.
Dept. Biol. Sci., Grad. School of Science, Univ. of Tokyo
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Shao C
Research Center For Nano-device And System Nagoya Institute Of Technology
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Dou Yanbo
Research Center For Nano-device And System Nagoya Institute Of Technology
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Mita Juro
Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device
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Zhang Baijun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Murata Tomohiro
Matsushita Electric Industrial Co. Ltd.
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Ishii Motonori
Matsushita Electric Industrial Co. Ltd.
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Okita Hideyuki
Corp.research & Development Center Oki Electric Industry Co. Ltd.
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Ikeda Yoshito
Matsushita Electric Industrial Co. Ltd.
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HIROSE Yutaka
Matsushita Electric Industrial Co., Ltd.
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INOUE Kaoru
Matsushita Electric Industrial Co., Ltd.
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TANAKA Tsuyoshi
Matsushita Electric Industrial Co., Ltd.
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SANO Yoshiaki
Corp.Research & Development Center, Oki Electric Industry Co., Ltd.
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KAIFU Katsuaki
Corp.Research & Development Center, Oki Electric Industry Co., Ltd.
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YAMADA Tomoyuki
Corp.Research & Development Center, Oki Electric Industry Co., Ltd.
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MAKITA Takehiko
Corp.Research & Development Center, Oki Electric Industry Co., Ltd.
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SAGIMORI Tomohiko
Corp.Research & Development Center, Oki Electric Industry Co., Ltd.
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Sano Yoshiaki
Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device
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Kaifu Katsuaki
Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device
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KUROIWA H.
Department of Biological Sciences, Graduate School of Science University of Tokyo
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Hirose Yutaka
Matsushita Electric Industrial Co. Ltd.
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Imanishi A.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Yamada Tomoyuki
Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device
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Kuroiwa H
Department Of Biological Sciences Graduate School Of Science University Of Tokyo
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Inui M.
Dept Biol. Sci. Grad School Sci. Univ. Tokyo
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Tanaka Tsuyoshi
Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Matsushita Electric Co. Ltd.
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Inoue Kaoru
Matsushita Electric Industrial Co. Ltd.
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Kuroiwa T.
Dept Biol. Sci. Grad School Sci. Univ. Tokyo
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Imanishi A.
Research Center For Nano-device And System Nagoya Institute Of Technology
著作論文
- Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer
- Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- Bacteriophage in Wolbachia, the endosymbionts causing reproductive alterations in arthropods(Genetics)(Proceeding of the Seventy-Third Annual Meeting of the Zoological Society of Japan)
- IDENTIFICATION OF ISW/, THE FIRST INSERTION SEQUENCE FROM THE INTRACELLULAR REPRODUCTIVE PARASITE WOLBACHIA(Genetics)(Proceedings of the Seventieth Annual Meeting of the Zoological Society of Japan)
- CLONING AND CHARACTERIZATION OF TCA CYCLE GENES FROM WOLBACHIA(Genetics)(Proceedings of the Sixty-Ninth Annual Meeting of the Zoological Society of Japan)
- ANALYSIS OF SPERM PROTEINS FROM WOLBACHIAINFECTED AND UNINFECTED CRIGKETS, TELEOGRYLLUS TAIWANEMMA(Genetics)(Proceedings of the Sixty-Ninth Annual Meeting of the Zoological Society of Japan)
- Valence-Band Discontinuity at the AIN/Si Interface
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
- High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
- Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon
- Studies of AlGaN/GaN HEMTs on 4-inch Silicon substrate(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Studies of AlGaN/GaN HEMTs on 4-inch Silicon substrate(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
- Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
- Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates