Ishikawa H | Research Center For Nano-device And System Nagoya Institute Of Technology

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著作論文

On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Growth by Metalorganic Chemical Vapor Deposition
Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy
Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
Experimental Results of Future Road-to-Vehicle Communications System with Handover Function(Wide Band Systems)
18 Mbit/s Carrier Frequency Offset-Spread Spectrum (CFO-SS) System Using 2.4 GHz ISM Band(Special Section on Spread Spectrum Techniques and Applications)
Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
Design of Carrier Frequency Offset-Spread Spectrum (CFO-SS) System Using 2.4 GHz ISM Band (Special Section on Spread Spectrum Techniques and Applications)
Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
Valence-Band Discontinuity at the AIN/Si Interface
Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
High-Temperature Behaviors of GaN Schottky Barrier Diode
Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
Optical Absorption and Photoluminescence Studies of n-type GaN
GaN on Si Substrate with AlGaN/AlN Intermediate Layer
Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition

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