High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(<Special Issue>Heterostructure Microelectronics with TWHM2003)
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概要
- 論文の詳細を見る
We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LT-BLs) are compared with each other By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AEM) images and capacitance-voltage measurements In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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SAKAI Masahiro
Research Center for Nano-Device and System, Nagaya Institute of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shibata Tomohiko
Rd Center Ngk Insulators Ltd.
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Arulkumaran Subramaniam
Research Center For Nano-device And System Nagoya Institute Of Technology
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Sakai Masahiro
Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L
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Ishikawa H
Kddi R&d Laboratories Inc.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Oda Osamu
Rd Center Ngk Insulators Ltd.
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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ASANO Kenta
Research Center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
RD Center, NGK INSULATORS, LTD.
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Asano Kenta
Research Center For Nano-device And System Nagoya Institute Of Technology
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Tanaka Mitsuhiro
Corporate R&d Ngk Insulators Ltd.
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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