AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
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概要
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We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heterostructure field-effect transistors (HFETs) and Schottky barrier diodes (SBDs). Novel HFETs with a LT-GaN cap layer have been proposed and fabricated, and we found that by using this LT-GaN cap layer as a gate insulator and providing surface passivation helps to significantly suppress current collapse and gate leakage in AlGaN/GaN HFETs. Furthermore, the combination of a LT-GaN cap layer and SiN film for the surface passivation led to both the suppression of current collapse and no significant degradation in the gate-drain breakdown voltage. We also investigated the correlation between the crystalline quality of LT-GaN cap layers and the current collapse in AlGaN/GaN HFETs, and found that a polycrystalline structure provides the most effective LT-GaN cap layer for suppressing current collapse. AlGaN/GaN SBDs using a LT-GaN cap layer to provide edge termination were also fabricated on Si substrates. The collapse-free AlGaN/GaN SBDs exhibited a high breakdown voltage of 1530V.
- 2008-07-02
著者
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Deguchi Tadayoshi
Advanced Technology Center, Research Laboratory, New Japan Radio Co., Ltd.
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Deguchi Tadayoshi
Advanced Technology Center Research Laboratory New Japan Radio Co. Ltd.
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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