Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence

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概要

• 論文の詳細を見る
• 2012-01-04

著者

• Wilson A.

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Wakejima Akio

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

関連論文

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• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
• Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
• AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
• Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
• Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
• On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
• Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
• Improvement in Performance of AlGaN/GaN HFETs by Utilizing a Low-Temperature GaN Cap Layer
• Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Growth by Metalorganic Chemical Vapor Deposition
• High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
• Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
• Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
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• Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Valence-Band Discontinuity at the AIN/Si Interface
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
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• Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
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• Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
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• Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
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• Optical Absorption and Photoluminescence Studies of n-type GaN
• GaN on Si Substrate with AlGaN/AlN Intermediate Layer
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• High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
• Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
• Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
• GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
• High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
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• Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
• Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
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• Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
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• Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
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• High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
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• Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
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• Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
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• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
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• Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
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• Metal–Organic Chemical Vapor Deposition Growth and Characterization of InAlGaN Multiple Quantum Wells
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• Barrier-Height-Enhanced $n$-GaN Schottky Photodiodes Using a Thin $p$-GaN Surface Layer
• Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
• Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire
• Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane $(11\bar{2}0)$ Sapphire
• Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate
• Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
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• Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy
• Defect Propagation from 3C-SiC Intermediate Layers to Ⅲ-Nitride Epilayers
• Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate

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