Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate

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概要

• 論文の詳細を見る
• 2013-02-25

著者

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Yano Yoshiki

  Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan

• Tabuchi Toshiya

  Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan

• Tokunaga Hiroki

  Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan

• Yamaoka Yuya

  Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan

• UBUKATA Akinori

  Taiyo Nippon Sanso Corporation

• CHRISTY Dennis

  Research Center for Nano-Device and System, Nagoya Institute of Technology

• SHIMAMURA Hayato

  Taiyo Nippon Sanso EMC Ltd.

• MATSUMOTO Koh

  Taiyo Nippon Sanso EMC Ltd.

• YAMAOKA Yuya

  Taiyo Nippon Sanso Corporation

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