Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy

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概要

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• The effects of growth temperature on nitrogen incorporation in GaNAs grown by chemical beam epitaxy are studied from 340 to 515°C. Generally speaking, with increasing growth temperature, nitrogen content decreases. However, three distinct growth-temperature-dependent regions for nitrogen incorporation with activation energies of 0.59, 0.05, and 0.95 eV can be identified at low, middle, and high growth temperatures, respectively. At low and high growth temperatures, the growth temperature dependences of nitrogen incorporation are due to triethylgallium (TEG)-pyrolysis- and nitrogen-desorption-controlled processes, respectively, while a TEG-transportation-limited process is observed at middle temperatures. Atomic force microscope (AFM) results also show that there are three different surface morphologies for GaNAs grown at different growth temperatures. Based on X-ray diffraction (XRD) and AFM results, the best growth mechanism is determined, and high quality GaN0.007As0.993/GaAs triple quantum wells are obtained.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-05-15

著者

• YAMAMORI Masayuki

  Research Center for Nano-Device and System, Nagoya Institute of Technology

• Ishikawa Hiroyasu

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

• Sun Yijun

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Ishikawa Hiroyasu

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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