Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-12-01

著者

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Laboratory Oki Electric Industry Co. Ltd.

• ZHANG Liangying

  Functional Materials Research Laboratory, Tongji University

• YAO Xi

  Functional Materials Research Laboratory, Tongji University

• Yao X

  Functional Materials Research Laboratory Tongji University

• Yao Xi

  Electronic Materials Research Laoratory Xi'an Jiaotong University

• Zhang L

  Functional Materials Research Laboratory Tongji University

• Zhang Liangying

  Electronic Materials Research Laoratory Xi'an Jiaotong University

• Zhang Liangying

  Functional Materials Research Laboratory Tongji University

• Zhang L

  National Institute Of Advanced Industrial Science And Technology

• Sun Y

  Department Of Applied Physics Hebei University Of Technology

• SUN Yijun

  Venture Business Laboratory, Nagoya Institute of Technology

• Sun Yijun

  Acupuncture College Beijing University Of Chinese Medicine

• Yao Xi

  Functional Materials Research Laboratory Tongji University

• Zhang L

  Institute Of Mechanical System Engineering National Institute Of Advanced Industrial Science And Tec

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

関連論文

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• Magnesium-Ion Indiffusion to Lithium Niobate Single-Crystal Fiber with MgF_2 as Diffusion Source
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
• Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
• AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
• AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
• Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
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• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
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• Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
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• Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
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• Optical Absorption and Photoluminescence Studies of n-type GaN
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• Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
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• Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
• Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
• Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
• The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
• Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
• Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
• Studies on AC Electroluminescence Device Made of BaTiO_3-CaTiO_3:Pr^ Diphase Ceramics
• PZT Film Formation With Use of Spray Coating Method
• Lead Zirconate Titanate Film Formation Technology with Spray Coating Method
• Pulsed Laser Deposited Lead Zirconate Titanate Thin Films for Micro Actuators
• Design and Fabrication of 1D and 2D Micro Scanners Actuated by Double Layered Lead Zirconate Titanate (PZT) Bimorph Beams
• Heat Flow and Detectivity of Multilayer Thin-Film Pyroelectric Detector
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
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• High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
• GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
• 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
• First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant
• DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
• Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (電子デバイス)
• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
• Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
• Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates
• Formation Mechanism for High-Surface-Area Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition

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