Void free at Interface of the SiC Film and Si Substrate
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-12-01
著者
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Sun Yong
Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital
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MIYASATO Tatsuro
Department of Computer Science and Electronics, Kyushu Institute of Technology
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Sun Y
Department Of Applied Physics Hebei University Of Technology
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MASUDA Koichiro
Semiconductor Laboratory, Exploitation of Next Generation Co., Ltd
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ENOKIDA Toyotsugu
Quality Evaluation and Chemical Analysis Department, Fukuryou Semicon Engineering Corporation
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HAGINO Hiroyasu
Quality Evaluation and Chemical Analysis Department, Fukuryou Semicon Engineering Corporation
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Sun Yong
Department Of Computer Science The Queen's University Of Belfast
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Hagino H
Technology Research Institute Of Osaka Prefecture
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Sun Y
Toshiba Res. Europe Ltd. Bristol Gbr
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Enokida T
Quality Evaluation And Chemical Analysis Department Fukuryo Semicon Engineering Corporation
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Masuda Koichiro
Semiconductor Laboratory Exploitation Of Next Generation Co. Ltd
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Miyasato T
Kyushu Institute Of Technology
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Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Sun Yong
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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Miyasato Tatsuro
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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Hagino Hiroyasu
Quality Evaluation and Chemical Analysis Department, Fukuryo Semicon Engineering Corporation
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