Improvement of Annealing Properties of SiC/Si Structure
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概要
- 論文の詳細を見る
Properties of the SiC film/Si substrate structure annealed in a hydrogen atmosphere are investigated by scanning electron microscopy observation, X-ray diffraction measurement and Auger electron spectroscopy analysis. Two types of defects, the line and point defects which are formed in vacuum annealing, are also observed in the SiC/Si structure annealed in hydrogen-atmosphere, but the density of the point defects is little. The hydrogen atmosphere annealing results in high crystallinity of the SiC film, and low compositional change at the surface of the SiC film.
- 社団法人応用物理学会の論文
- 2000-05-01
著者
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Sun Yong
Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital
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Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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