Growth Mechanism of ZnS:Mn Films Obtained by Hydrogen Plasma Sputtering and Its Application to a Thin-Film Electroluminescent Device

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概要

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• ZnS:Mn electroluminescent (EL) devices were fabricated by the technique of hydrogen plasma sputtering (HPS). ZnS films were grown by HPS followed by annealing at 500℃ for 1 h in a vacuum. Greater brightness was obtained when the growth of ZnS:Mn film was performed at 30℃ than at 200℃. From the results of scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), it was found that the quality of ZnS:Mn film deposited at 200℃ is poor due to the lack of sulfur atoms. The films grown at 30℃ are sulfur-rich and have better crystallinity. Manganese concentration of the HPS film increases with decreasing sputtering pressure. The growth rate shows the similar tendency with decreasing the pressure, which is explained by the glow discharge theory.

• 社団法人応用物理学会の論文
• 1993-04-15

著者

• Sakama Hiroshi

  Applied Technology Research Center Nkk Corporation:(present Address) Department Of Applied Physics T

• Tonouchi Masayoshi

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

• Miyasato T

  Kyushu Institute Of Technology

• Miyasato Tatsuro

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

• OHMURA Masashi

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

• Ohmura M

  Tokyo Inst. Technol. Yokohama Jpn

• OHMURA Masanori

  Applied Technology Research Center, NKK Corporation

• Miyasato Tatsuro

  Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology

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