Nonvolatile Memory Based on Phase Transition in Chalcogenide Thin Film
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概要
- 論文の詳細を見る
Electrically erasable nonvolatile memories based on the reversible amorphous-crystalline phase transition were studied. In the appropriate set- and reset-conditions, more than 10^5 repetition cycles of write/erase were attained in the memory devices composed of As-Sb-Te films. Deterioration of memory devices was caused by the phase separation due to the segregation of crystallites in the active region in the memory cells and in the peripheral area around the active region. The phase separation in the peripheral area around the active region still occurred even in the memory devices using well-designed materials. Deterioration phenomena can be greatly suppressed by the reduction of the device geometry.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
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Nakayama K
National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
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Nakayama Kazuya
Department Of Electrical And Computer Engineering Kanazawa University
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Suzuki Masakuni
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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KITAGAWA Toshiya
Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University
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OHMURA Masashi
Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University
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Ohmura M
Tokyo Inst. Technol. Yokohama Jpn
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Ohmura Masashi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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