A Study on the Rectifying Contacts in Metal(I)/As_2Se_1Te_2/Metal(II) Structures
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概要
- 論文の詳細を見る
We observed rectifying effects in samples with the structure of Al/chalcogenide amorphous film(As_2Se_1Te_2)/Sb. Measurements of frequency dependences of parallel resistance and capacitance revealed that the rectifying layer, which was considered to be formed at the region of contact with Al, had a large width (>6000 Å). A chemical reaction, which was inferred from the existence of a small short-circuit current, caused the formation of the alloy region at the contact.
- 社団法人応用物理学会の論文
- 1980-04-05
著者
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OKANO Shuichi
Department of Electrical and Computer Engineering, Kanazawa University
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Okano Shuichi
Department Of Electrical Engineering Faculty Of Technology Kanazawa University
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Suzuki Masakuni
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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NISHIJIMA Kouichi
Department of Electrical Engineering, Faculty of Technology, Kanazawa University
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Nishijima Kouichi
Department Of Electrical Engineering Faculty Of Technology Kanazawa University
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