Nakayama K | National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
スポンサーリンク
概要
関連著者
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Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
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Nakayama K
National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
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OZAKI Masanori
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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YOSHINO Katsumi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Yoshino Katsumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Nakayama Keizo
Department of Medicine and Clinical Science, Graduate School of Medical Sciences, Kyushu University
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Nakayama Keizo
Department Of Medicine And Clinical Science Graduate School Of Medical Sciences Kyushu University
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Ozaki Masanori
Department Of Electrical Electronic And Informational Engineering Osaka University
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Nakayama Keizo
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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NAKAYAMA Kan
National Research Laboratory of Metrology
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Fujimoto H
Daido Inst. Technol. Nagoya Jpn
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山田 弘司
核融合科学研究所
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山田 啓文
京都大学工学研究科電子工学専攻
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KAGESHIMA Masami
Department of Applied Physics, Graduate School of Engineering, Osaka University
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Kageshima M
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kageshima Masami
Joint Research Center For Atom Technology National Institute Of Advanced Industrial Science And Tech
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Kageshima M
Joint Research Center For Atom Technology (jrcat)
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Kageshima Masami
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Hamada Y
Nagoya Municipal Industrial Res. Inst. Nagoya Jpn
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Maki Kazunari
Mitsubishi Materials Corporation Development Section Sanda Plant
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KAWAZU Akira
Department of Applied Physics, The University of Tokyo
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Yoshida O
Kao Corporation Recording And Lmaging Science Laboratories
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Endo Ken
Department Of Chemistry Sophia University
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Endo K
Department Of Chemistry Sophia University
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Maki K
Mitsubishi Materials Corporation Development Section Sanda Plant
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Kawazu A
Department Of Applied Physics University Of Tsukuba
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Kawazu Akira
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:(present Address) Komatsu E
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Endo Katsumi
Department of Chemistry, Sophia University
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Yoshida Osamu
Department of Ophthalmology, Kochi Medical School
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MORITAKE Hiroshi
Department of Electrical and Electronic Engineering, National Defense Academy
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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Takuma H
Univ. Electro‐communications Tokyo Jpn
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Takuma Hiroshi
Institute For Laser Science University Of Electro-communications
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Takuma H
Japan Atomic Energy Res. Inst. Kyoto
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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Tanaka M
Production Engineering Research Laboratory Hitachi Ltd.
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Tanaka M
Mitsubishi Electric Co. Ltd. Hyogo Jpn
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Sasaki K
Faculty Of Pharmaceutical Sciences Okayama University
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Fujino M
Toshiba Corp. Mie Jpn
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Tanaka Michiko
Tokyo University Of Agiculture And Technology Department Of Biotechnology
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HAKUTA Kohzo
Institute for Laser Science, University of Electro-Communications
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NAKAYAMA Kunihiko
Institute for Laser Science, University of Electro-Communications
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FUJINO Masashi
Institute for Laser Science, University of Electro-Communications
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Tanaka M
New Materials Research Center Sanyo Electric Co. Ltd.
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NAKAMURA Yoshihisa
Research Institute of Electrical Communication, Tohoku University
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Fujino Masashi
Institute For Laser Science University Of Electro-communications
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Tanaka M
Manufacturing Development Center Mitsubishi Electric Corporation
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TOKUMOTO Hiroshi
Electrotechmical Laboratory
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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FUJIMOTO Hiroyuki
National Research Laboratory of Metrology
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YAMADA Hirofumi
National Research Laboratory of Metrology
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MORITA Yukinori
National Institute for Advanced Interdisciplinary Research
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TOKUMOTO Hiroshi
National Institute for Advanced Interdisciplinary Research
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Morita Y
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Tokumoto Hiroshi
Jrcat National Institute For Advanced Interdisciplinary Research
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Tokumoto Hiroshi
Elecltrotechnical Laboratory
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Tokumoto Hiroshi
Electrotechnical Laboratory (etl)
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Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)
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Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat):national Institute Of Advanced Industrial Science
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Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)-national Institute Of Advanced Industrial Science
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Nakamura Yoshihisa
Research Institute Of Electrical Communication Tohoku University
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Tanaka M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Endo Katsumi
Processing Development Research Laboratories, Kao Corporation
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Yoshida Osamu
Processing Development Research Laboratories, Kao Corporation
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Nakayama Kazuhiko
Processing Development Research Laboratories, Kao Corporation
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Maki Kazuo
Processing Development Research Laboratories, Kao Corporation
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Nakamura Y
Nec Fundamental Research Laboratories
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Morita Y
Consortium Fuer Elektrochemishe Ind. Gmbh Muenchen Deu
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Nakamura Y
Tohoku Univ. Sendai‐shi Jpn
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MORITAKE Hiroshi
Electrical and Electronic Engineering, National Defense Academy
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Takuma Hiroshi
Institute For Laser Science The University Of Electro-communications
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Taino M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Mana G
Cnr Istituto Di Metrologia "g. Colonnetti
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Matsuzaki T
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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Moritake Hiroshi
Electrical And Electronic Engineering National Defense Academy
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Morita Yukinori
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Mizukami Hiroyoshi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Nakamura Yoshihisa
Research Institute Of Electrical Communication Tohoku Univeristy
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Maki Kazuo
Processing Development Research Lab. Kao Corporation
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Fujimoto Hiroyuki
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (NMIJ/AIST), Tsukuba Central 3, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
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Shimoda Yuki
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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小野田 光宣
姫路工業大学 工学部
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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NAKAYAMA Kouichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAOKA Hiromichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAI Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
ONRI, AIST
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HORINO Yuji
ONRI, AIST
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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YAMADA HIROFUMI
Department of Surgery, Saitama Medical Center, Saitama Medical School
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Takai M
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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SAKAMA Hiroshi
Department of Applied Physics, The University of Tokyo
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Yamaguchi Y
Central Workshop Osaka University
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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TANAKA Mitsuru
National Research Laboratory of Metrology
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MISAWA Guento
National Research Laboratory of Metrology
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Imayoshi Takahiro
Department of Applied Physics, University of Tokyo
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Kawagishi Yoshiaki
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Imayoshi Takahiro
Department Of Applied Physics University Of Tokyo
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Sasaki Kenji
Processing Development Research Laboratories, Kao Corporation
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ENDO Katsumi
Mechanical Processing Technology Research Laboratories, Kao Corporation
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YOSHIDA Osamu
Mechanical Processing Technology Research Laboratories, Kao Corporation
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SASAKI Kenji
Mechanical Processing Technology Research Laboratories, Kao Corporation
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MAKI Kazuo
Mechanical Processing Technology Research Laboratories, Kao Corporation
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SATOH Shigenori
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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KOBAYASHI Hideyuki
Processing Development Research Laboratories, Kao Corporation
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Sakama Hiroshi
Applied Technology Research Center Nkk Corporation:(present Address) Department Of Applied Physics T
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Satoh Shiro
Semiconductor Research Laboratory Clarion Co. Ltd.
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Nakayama Kazuya
Department Of Electrical And Computer Engineering Kanazawa University
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Imayoshi T
Univ. Tokyo Tokyo Jpn
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MANA Giovanni
CNR, Istituto di Metrologia "G. Colonnetti"
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TOGO Tsuyoshi
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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BLINOV Lev
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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KOZLOVSKY Mikhail
Institute of Crystallography, Russian Academy of Sciences
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Sakama Hiroshi
Department Of Applied Physics The University Of Tokyo
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Yamada Hirofumi
Department Of Electronics Science And Engineering Kyoto University
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Blinov Lev
Institute Of Crystallography Russian Academy Of Science
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Kinomura A
National Institute Of Advanced Industrial Science And Technology
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Togo Tsuyoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Kozlovsky Mikhail
Institute Of Crystallography Russian Academy Of Sciences
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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Takaoka H
The Functional Devices Research Laboratories Nec Corporation
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Suzuki Masakuni
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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KITAGAWA Toshiya
Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University
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OHMURA Masashi
Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University
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Ohmura M
Tokyo Inst. Technol. Yokohama Jpn
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Takai Mikio
Faculty Of Engineering Science And Reseatch Center For Extreme Materials
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Kobayashi Hideyuki
Processing Development Research Laboratories Kao Corporation
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Blinov Lev
Department Of Electronic Engineering Graduate School Of Engineering Osaka University:institute Of Cr
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Ohmura Masashi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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Yamada Hirofumi
Department of Electrical Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
著作論文
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Formation of KrF Excimer Using a Laser-Induced Harpooning Reaction through Two-Photon Pumping
- Lifetime Measurements for KrF Excimer Using Photoassociative Pumping
- Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
- Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
- Nature of Tip-Sample Interaction in Dynamic Mode Atomic Force Microscopy
- Tip-Induced Surface Disorder on Hydrogen-Terminated Silicon(111) Surface Observed by Ultrahigh-Vacuum Atomic Force Microscopy
- Observation of Hydrogen-Terminated Silicon (111) Surface by Ultrahigh-Vacuum Atomic Force Microscopy
- Output Enhancement Effect of Magnetic Underlayer in High-Density Magnetic Recording
- Metal Particulate (MP)/Metal Evaporation (ME) Double-Layered Media for High-Density Recording
- Tunable Optical Stop Band and Reflection Peak in Synthetic Opal Infiltrated with Liquid Crystal and Conducting Polymer as Photonic Crystal
- Influence of Underlayer Magnetic Properties upon Output in Metal Particulate Double-Layered Tape
- Optical recording using smectic layer rotation in ferroelectric liquid crystal
- Light Bounces in Two-Beam Scanning Laser Interferometers
- Direct Measurement of Transient Drain Currents in Partially-depleted SOI NMOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Light Bounces in Two-Beam Scanning Laser Interferometers
- Electric Field-Induced Migration of SiO_2 Particles in Smectic Liquid Crystal
- Control of Layer Arrangement by Electric Field in Ferroelectric and Antiferroelectric Liquid Crystals
- Smectic Layer Rotation in the Smectic A Phase of Ferroelectric and Antiferroelectric Liquid Crystals
- Effect of Trans-Cis Isomerization of a Chiral Azo-Dye on Dye-Induced Ferroelectricity in an Achiral Liquid Crystal
- Smectic Layer Rotation in Ferroelectric Liquid Crystals
- Smectic Layer Rotation in Antiferroelectric Liquid Crystal
- Nonvolatile Memory Based on Phase Transition in Chalcogenide Thin Film