Maegawa Shigeto | Ulsi Development Center Mitsubishi Electric Corporation

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著作論文

Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices

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