Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
スポンサーリンク
概要
- 論文の詳細を見る
A novel selective epitaxial growth (SEG) technology which uses ultrahigh-vacuum chemical vapor deposition and low-damage sidewall etching with a Cl2-plasma gas is experimentally demonstrated for elevated source/drain (S/D) ultrathin silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) devices. It is found that the deviation of parasitic S/D series resistance in elevated S/D sub-40-nm-thick SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) can be nearly as low as that in bulk MOSFETs, because the excellent surface morphology of the epitaxial Si layer enables formation of a uniform CoSi2 film. Moreover, neither gate/drain bridging nor any other leakage phenomena are pronounced. These results indicate that this SEG technology is promising for elevated S/D ultrathin SOI CMOS devices for the 90-nm technology node and beyond.
- 2003-04-15
著者
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Eimori Takahisa
Ulsi Development Center Mitsubishi Electric Corporation
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NAKAHATA Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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Matsumoto Takuji
Ulsi Development Center Mitsubishi Electric Corporation
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Ota Kazunobu
Ulsi Development Center Mitsubishi Electric Corporation
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Oda Hidekazu
Ulsi Development Center Mitsubishi Electric Corporation
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Ozeki Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Sayama Hirokazu
Ulsi Development Center Mitsubishi Electric Corporation
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Sugihara Kohei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Oda Hidekazu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Eimori Takahisa
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Maegawa Shigeto
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Sugihara Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Ozeki Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Matsumoto Takuji
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Sayama Hirokazu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Nishimura Tadashi
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Maeda Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
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