Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-06-01

著者

• TAKAI Mikio

  Research Center for Materials Science at Extreme Conditions, Osaka University

• INUISHI Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• Takai M

  Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien

• Ohno Y

  Nagoya Univ. Naogya Jpn

• Ohno Yoshikazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• KISHIMOTO Takehisa

  Research Center for Materials Science at Extreme Conditions and Faculty of Engineering Science, Osak

• Nishimura Tadashi

  The Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Research And Development Center Mitsubishi Electric Corporation

• Kishimoto T

  Department Of Physics Osaka University

• Kishimoto T

  Department Of Electrical Engineering Waseda University

• Inuishi Masahide

  Advanced Device Development Dept. Renesas Technology Corp.

• Inuishi Masahide

  Ulsi Development Center Mitsubishi Electric Corporation

• Takai Mikio

  Research Center For Environmental Genomics Kobe University

• Takai Mikio

  Faculty Of Engineering Science And Reseatch Center For Extreme Materials

• Nishimura Tadashi

  Ulsi Development Center Mitsubishi Electric Corporation

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