Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)

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概要

• 論文の詳細を見る

• SOI DRAM's are candidates for giga-bit scale DRAM's due to the inherent features of SOI structure, and are also desired to be used as low-voltage memories which will be used in portable systems in the forthcoming multimedia era. However, some drawbacks are also anticipated owing to floating substrate effects. In this report, the advantages and problems concerning SOI DRAM's were reconsidered by evaluation of our test devices and also by analysis with device and circuit simulators for their future prospects. The following advantages of SOI DRAM's were verified. Low-voltage operation, active current reduction and speed gain were obtained by the reduced junction capacitance and the back-gate-bias effect. Static refresh characteristics were improved due to the reduced junction area. Soft error immunity was improved greatly by the complete isolation of the active region when the body potential is fixed. The problems that need to be resolved are closely related to the floating substrate effect. The soft error immunity in a floating body condition and the dynamic refresh characteristics were degraded by the instability of the floating body potential. Process and device approaches such as the field-shield-body-fixing method as well as circuit approaches like the BSG scheme are required to eliminate the floating substrate effects. From these investigations it can be said that a low-voltage DRAM with a current design rule would be possible if we pay close attention to the floating-substrate-related issues by optimizing various process/device and circuit techniques. With further development of the technology to suppress the floating substrate effects, it will be possible to develop simple and low-cost giga-bit level SOI DRAM's which use the SOI's inherent features to the full.

• 社団法人電子情報通信学会の論文
• 1996-06-25

著者

• YAMAGUCHI Yasuo

  Institute for Materials Research, Tohoku University

• MORISHITA Fukashi

  Renesas Technology Corp.

• Yamaguchi Y

  Tohoku Univ. Sendai

• Yamaguchi Y

  Kumamoto Techno Res. Park Kumamoto Jpn

• IWAMATSU Toshiaki

  ULSI Laboratory, Mitsubishi Electric Corporation

• YAMAGUCHI Yasuo

  ULSI Laboratory, Mitsubishi Electric Corporation

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• MORISHITA Fukashi

  ULSI Development Center, Mitsubishi Electric Corporation

• EIMORI Takahisa

  ULSI Development Center, Mitsubishi Electric Corporation

• OASHI Toshiyuki

  ULSI Development Center, Mitsubishi Electric Corporation

• ARIMOTO Kazutami

  ULSI Development Center, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• MIYOSHI Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• MIYAMOTO Shouichi

  ULSI Laboratory, Mitsubishi Electric Corporation

• SUMA Katsuhiro

  Semiconductor Group, Mitsubishi Electric Corporation

• TSURUDA Takahiro

  ULSI Laboratory, Mitsubishi Electric Corporation

• HIROSE Masakazu

  Daioh Electric Corporation

• HIDAKA Hideto

  ULSI Laboratory, Mitsubishi Electric Corporation

• FUJISHIMA Kazuyasu

  Semiconductor Group, Mitsubishi Electric Corporation

• IWAMATSU Toshiaki

  Advanced Device Development Dept., Renesas Technology Corp.

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• Eimori T

  Mitsubishi Electric Corp. Hyogo Jpn

• Eimori Takahisa

  Ulsi Development Center Mitsubishi Electric Corporation

• Yamaguchi Y

  Central Workshop Osaka University

• Miyamoto Shouichi

  Ulsi Laboratory Mitsubishi Electric Corporation

• Miyoshi Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Nishimura Tadashi

  The Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Research And Development Center Mitsubishi Electric Corporation

• Iwamatsu Toshiaki

  Advanced Device Development Dept. Renesas Technology Corp.

• Inoue Y

  Ntt Access Network Service Systems Laboratories Ntt Corporation

• Hidaka H

  Yrp Mobil Telecommunications Key Technol. Res. Lab. Co. Ltd. Yokosuka‐shi Jpn

• Hidaka Hideto

  Ulsi Laboratory Mitsubishi Electric Corporation

• Oashi Toshiyuki

  Ulsi Development Center Mitsubishi Electric Corporation

• Fujishima K

  Mitsubishi Electric Co. Itami‐shi Jpn

• Miyoshi H

  Mitsubishi Electric Corp.

• Miyoshi Hirokazu

  徳島大学医学部

• Suma Katsuhiro

  Semiconductor Group Mitsubishi Electric Corporation

• Arimoto Kazutami

  System Core Technology Div. Renesas Technology Corp.

• Arimoto Kazutami

  Ulsi Development Center Mitsubishi Electric Corporation

• Tsuruda Takahiro

  The Ulsi Laboratory Mitsubishi Electric Corporation

• Morishita Fukashi

  System Core Technology Div. Renesas Technology Corp.

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

• Morishita Fukashi

  Renesas Technology Corporation

• Nishimura Tadashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Morishita Fukashi

  Ulsi Development Center Mitsubishi Electric Corp.

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