Arimoto Kazutami | System Core Technology Div. Renesas Technology Corp.
スポンサーリンク
概要
関連著者
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Arimoto Kazutami
System Core Technology Div. Renesas Technology Corp.
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MORISHITA Fukashi
Renesas Technology Corp.
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Morishita Fukashi
System Core Technology Div. Renesas Technology Corp.
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Morishita Fukashi
Renesas Technology Corporation
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Dosaka K
System Core Technology Div. System Solution Business Group Renesas Technology Co.
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Noda H
System Core Technology Div. System Solution Business Group Renesas Technology Co.
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Noda H
Hitachi Ltd. Kokubunji‐shi Jpn
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Koide Tetsushi
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Koide Tetsushi
Hiroshima Univ. Higashihiroshima‐shi Jpn
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ARIMOTO Kazutami
Renesas Technology
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Arimoto Kazutami
Renesas Electronics Corp.
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Mattausch Hans
Hiroshima University
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Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
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YAMAZAKI Akira
Renesas Technology
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NODA Hideyuki
Renesas Technology Corp.
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DOSAKA Katsumi
Renesas Technology Corp.
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OZAKI Hideyuki
Renesas Technology Corp.
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Ozaki H
Renesas Technology Corp.
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Ozaki Hideyuki
Ulsi Laboratory Mitsubishi Electric Corporation
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Dosaka Katsumi
System Core Technology Div. Renesas Technology Corp.
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ARIMOTO Kazutami
System Core Technology Div. System Solution Business Group, Renesas Technology Co.
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Yamazaki A
Renesas Technology
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Dosaka Katsumi
Renesas Electronics Corp. Itami‐shi Jpn
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YAMAZAKI AKIRA
Neonatal Care Center, Niigata City General Hospital
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Arimoto Kazutami
Ulsi Development Center Mitsubishi Electric Corporation
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MORISHITA Fukashi
ULSI Development Center, Mitsubishi Electric Corporation
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ARIMOTO Kazutami
ULSI Development Center, Mitsubishi Electric Corporation
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Mattausch Hans
Research Center For Nanodevices And Systems Hiroshima University
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KOIDE Tetsushi
Research Center for Nanodevices and Systems, Hiroshima University
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Koide Tetsushi
Research Center For Nanodevices And Systems Hiroshima University
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Fujishima Kazuyasu
Ulsi Development Center Mitsubishi Electric Corp.
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Morishita Fukashi
Ulsi Development Center Mitsubishi Electric Corp.
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Haraguchi Masaru
Renesas Technol. Itami‐shi Jpn
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Haraguchi Masaru
Department Of Physics Faculty Of Science Osaka University
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Haraguchi Masaru
Department Of Electrical And Electronics Engineering Sophia University
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Haraguchi Masaru
Renesas Technology Corporation
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MOROOKA Yoshikazu
Renesas Technology
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WATANABE Naoya
Renesas Technology Corp.
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HACHISUKA Atsushi
Renesas Technology Corp.
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Inoue Kazunari
Custom Lsi Business Unit Custom Lsi Design Dept. 1 Renesas Technology Corporation
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Saito Kazunori
System Core Technology Div. System Solution Business Group Renesas Technology Co.
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Hayashi I
Renesas Technology Corp.
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Noda Hideyuki
System Core Technology Div. System Solution Business Group Renesas Technology Co.
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Oashi Toshiyuki
Ulsi Development Center Mitsubishi Electric Corporation
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KUMAKI Takeshi
Research Institute for Nanodevice and Bio Systems, Hiroshima University
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ISHIZAKI Masakatsu
Research Institute for Nanodevice and Bio Systems, Hiroshima University
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GYOHTEN Takayuki
System Core Technology Div. System Solution Business Group, Renesas Technology Co.
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Kono Yutaka
Network Memory Design Dept. System Solution Business Unit 4 System Solution Business Group Renesas T
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Gyohten Takayuki
System Core Technology Div. System Solution Business Group Renesas Technology Co.
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Ishizaki Masakatsu
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Yoshihara Tsutomu
Graduate School Of Information Production And Systems Waseda Univ.
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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MORIHARA Toshinori
Renesas Technology
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AMANO Teruhiko
Renesas Technology Corp.
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WAKE Setsuo
Renesas Technology Corp.
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YOSHIHARA Tsutomu
Waseda University
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TAITO Yasuhiko
Renesas Technology Corporation
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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EIMORI Takahisa
ULSI Development Center, Mitsubishi Electric Corporation
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OASHI Toshiyuki
ULSI Development Center, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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HIDAKA Hideto
ULSI Laboratory, Mitsubishi Electric Corporation
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FUJISHIMA Kazuyasu
Semiconductor Group, Mitsubishi Electric Corporation
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Inoue Y
National Defense Acad. Yokosuka Jpn
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帶刀 恭彦
(株)ルネサステクノロジ
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Eimori T
Mitsubishi Electric Corp. Hyogo Jpn
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Eimori Takahisa
Ulsi Development Center Mitsubishi Electric Corporation
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Yamaguchi Y
Central Workshop Osaka University
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TANIZAKI Tetsushi
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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NAGURA Yoshihiro
The authors are with System LSI Division, Mitsubishi Electric Corp.
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Fujino Takeshi
Wood Research Institute, Kyoto University
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Fujino T
Wood Research Institute Kyoto University
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Fujino Takeshi
Department Of Electric And Electronic Engineering Ritsumeikan University
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Inoue Y
Ntt Access Network Service Systems Laboratories Ntt Corporation
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Hidaka H
Yrp Mobil Telecommunications Key Technol. Res. Lab. Co. Ltd. Yokosuka‐shi Jpn
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Hidaka Hideto
Ulsi Laboratory Mitsubishi Electric Corporation
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Tsukude M
Ulsi Laboratory Mitsubishi Electric Corporation
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Fujishima K
Mitsubishi Electric Co. Itami‐shi Jpn
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Yamagata T
Mitsubishi Electric Corp. Itami‐shi Jpn
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SHIMANO Hiroki
System Core Technology Div., Renesas Technology Corp.
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MORISHITA Fukashi
System Core Technology Div., Renesas Technology Corp.
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HAYASHI Isamu
Renesas Technology Corp.
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GYOHTEN Takayuki
Renesas Technology Corp.
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OKAMOTO Mako
Daioh Electric Corp.
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Shimano Hiroki
System Core Technology Div. Renesas Technology Corp.
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Arimoto Kazutami
Ulsi Laboratory Mitsubishi Electric Corporation
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Tsuruda Takahiro
The Ulsi Laboratory Mitsubishi Electric Corporation
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Tomishima S
Ulsi Laboratory Mitsubishi Electric Corporation
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Tomishima Shigeki
Ulsi Laboratory Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Furue Katsuya
The Authors Are With System Lsi Division Mitsubishi Electric Corp.
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Tanizaki Tetsushi
The Authors Are With Ulsi Development Center Mitsubishi Electric Corp.
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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OSAWA Tokuya
Renesas Technology
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MORISHIMA Chikayoshi
Renesas Technology
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OKUNO Yoshihiro
Renesas Technology
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FUJINO Takeshi
Department of Electric and Electronic Engineering, Ritsumeikan University
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KINOSHITA Mitsuya
Renesas Technology Corporation
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HATAKENAKA Makoto
Renesas Technology Corporation
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AMO Atsushi
Renesas Technology Corporation
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMADA Michihiro
ULSI Development Center, Mitsubishi Electric Corporation
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYAMOTO Shouichi
ULSI Laboratory, Mitsubishi Electric Corporation
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SUMA Katsuhiro
Semiconductor Group, Mitsubishi Electric Corporation
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TSURUDA Takahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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HIROSE Masakazu
Daioh Electric Corporation
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FUJINO Takeshi
ULSI Laboratory, Mitsubishi Electric Corporation
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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Wake Setsuo
Ulsi Development Center Mitsubishi Electric Corp.
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Anami Kenji
Renesas Technology Corp.
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WATANABE Naoya
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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MORISHITA Fukashi
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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TAITO Ysuhiko
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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YAMAZAKI Akira
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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DOSAKA Katsumi
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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MOROOKA Yoshikazu
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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IGAUE Futoshi
The author is with Mitsubishi Electric Engineering Co., Ltd.
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FURUE Katsuya
The authors are with System LSI Division, Mitsubishi Electric Corp.
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KOMOIKE Tatsunori
The authors are with System LSI Division, Mitsubishi Electric Corp.
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MORIHARA Toshinori
The authors are with System LSI Division, Mitsubishi Electric Corp.
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HACHISUKA Atsushi
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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ARIMOTO Kazutami
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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OZAKI Hideyuki
The authors are with ULSI Development Center, Mitsubishi Electric Corp.
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YAMAZAKI Akira
ULSI Development Center, Mitsubishi Electric Corp.
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INOUE Kazunari
LSI Division, Mitsubishi Electric Corp.
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HAYASHI Isamu
ULSI Development Center, Mitsubishi Electric Corp.
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NODA Hideyuki
ULSI Development Center, Mitsubishi Electric Corp.
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WATANABE Naoya
ULSI Development Center, Mitsubishi Electric Corp.
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DOSAKA Katsumi
ULSI Development Center, Mitsubishi Electric Corp.
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MOROOKA Yoshikazu
ULSI Development Center, Mitsubishi Electric Corp.
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SOEDA Shinya
ULSI Development Center, Mitsubishi Electric Corp.
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FUJISHIMA Kazuyasu
ULSI Development Center, Mitsubishi Electric Corp.
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OZAKI Hideyuki
ULSI Development Center, Mitsubishi Electric Corp.
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HORIBA Yasutaka
Kansai University
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ASAKURA Mikio
ULSI Laboratory, Mitsubishi Electric Corporation
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Maegawa Shigeto
Renesas Technology Corp.
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Ipposhi Takashi
Renesas Technology Corp.
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Miyamoto Shouichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Miyoshi Hirokazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Fujino Takeshi
Ulsi Laboratory Mitsubishi Electric Corporation
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Soeda Shinya
Ulsi Development Center Mitsubishi Electric Corp.
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Asakura Mikio
Ulsi Laboratory Mitsubishi Electric Corporation
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Tsukude Masaki
Ulsi Laboratory Mitsubishi Electric Corporation
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Ooishi Tsukasa
Ulsi Laboratory Mitsubishi Electric Corporation
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DOSAKA Katsumi
Mitsubishi Electric Corporation ULSI Laboratory
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Yamagata Tadato
Ulsi Laboratory Mitsubishi Electric Corporation
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Miyoshi H
Mitsubishi Electric Corp.
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Miyoshi Hirokazu
徳島大学医学部
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KURODA Yasuto
Network Memory Design Dept., System Solution Business Unit 4, System Solution Business Group, Renesa
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KURODA Yasuto
System Core Technology Div. System Solution Business Group, Renesas Technology Co.
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KURODA Yasuto
Research Center for Nanodevices and Systems, Hiroshima University
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NODA Hideyuki
Custom LSI Business unit, Custom LSI Design Dept. 1, Renesas Technology Corporation
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ARIMOTO Kazutami
Custom LSI Business unit, Custom LSI Design Dept. 1, Renesas Technology Corporation
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INOUE Kazunari
Renesas Technology Corp.
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FUJISHIMA Kazuyasu
Renesas Technology Corp.
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Suma Katsuhiro
Semiconductor Group Mitsubishi Electric Corporation
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NAGURA Yoshihiro
Mitsubishi Electric Corporation
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FUJIWARA Yoshinori
Mitsubishi Electric Corporation
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FURUE Katsuya
Mitsubishi Electric Corporation
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OHMITYA Ryuji
Mitsubishi Electric Corporation
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KOMOIKE Tatsunori
Mitsubishi Electric Corporation
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OKITAKA Takenori
Mitsubishi Electric Corporation
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TANIZAKI Tetsushi
Mitsubishi Electric Corporation
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ARIMOTO Kazutami
Mitsubishi Electric Corporation
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KODA Yukiyoshi
Mitsubishi Electric Corporation
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TADA Tetsuo
Mitsubishi Electric Corporation
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Yamada Michihiro
Ulsi Development Center Mitsubishi Electric Corporation
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Igaue Futoshi
The Author Is With Mitsubishi Electric Engineering Co. Ltd.
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Inoue Kazunari
Renesas Electronics Corporation
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MORISHITA Fukashi
with ULSI Development Center, Mitsubishi Electric Corporation
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ARIMOTO Kazutami
with ULSI Development Center, Mitsubishi Electric Corporation
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FUJISHIMA Kazuyasu
System LSI Development Center, Mitsubishi Electric Corporation
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OZAKI Hideyuki
with ULSI Development Center, Mitsubishi Electric Corporation
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YOSHIHARA Tsutomu
Display Devices Works, Mitsubishi Electric Corporation
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Tomishima Shigeki
ULSI Laboratory, Mitsubishi Electric Corporation
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KUGE Shigehiro
the ULSI Laboratory, Mitsubishi Electric Corporation
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MORISHITA Fukashi
the ULSI Laboratory, Mitsubishi Electric Corporation
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TOMISHIMA Shigeki
the ULSI Laboratory, Mitsubishi Electric Corporation
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TSUKUDE Masaki
the ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGATA Tadako
the ULSI Laboratory, Mitsubishi Electric Corporation
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ARIMOTO Kazutami
the ULSI Laboratory, Mitsubishi Electric Corporation
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Kuge Shigehiro
The Ulsi Laboratory Mitsubishi Electric Corporation
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Nagura Yoshihiro
The Authors Are With System Lsi Division Mitsubishi Electric Corp.
著作論文
- A Study of Sense-Voltage Margins in Low-Voltage-Operating Embedded DRAM Macros(Integrated Electronics)
- A Low Power Embedded DRAM Macro for Battery-Operated LSIs(Power Optimization)(VLSI Design and CAD Algorithms)
- Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Acceleration of DCT Processing with Massive-Parallel Memory-Embedded SIMD Matrix Processor(Image Processing and Video Processing)
- A Continuous-Adaptive DDRx Interface with Flexible Round-Trip-Time and Full Self Loop-Backed AC Test
- An Embedded DRAM Hybrid Macro with Auto Signa Management and Enhanced-on-Chip Tester
- A 0.18 ★m 32 Mb Embedded DRAM Macro for 3-D Graphics Controller
- A Voltage Scalable Advanced DFM RAM with Accelerated Screening for Low Power SoC Platform(Next-Generation Memory for SoC,VLSI Technology toward Frontiers of New Market)
- Integration Architecture of Content Addressable Memory and Massive-Parallel Memory-Embedded SIMD Matrix for Versatile Multimedia Processor
- Real-Time Huffman Encoder with Pipelined CAM-Based Data Path and Code-Word-Table Optimizer(Image Processing and Video Processing)
- A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC(Novel Device Architectures and System Integration Technologies)
- A CAM-Based Signature-Matching Co-processor with Application-Driven Power-Reduction Features(Integrated Electronics)
- Embedded Low-Power Dynamic TCAM Architecture with Transparently Scheduled Refresh(Memory, Low-Power LSI and Low-Power IP)
- On-Chip Memory Power-Cut Scheme Suitable for Low Power SoC Platform
- A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI(Memory,Low-Power, High-Speed LSIs and Related Technologies)
- An On-Chip Supply-Voltage Control System Considering PVT Variations for Worst-Caseless Lower Voltage SoC Design(Novel Device Architectures and System Integration Technologies)
- Accomplishment of At-Speed BISR for Embedded DRAMs(Special Issue on Test and Verification of VLSI)
- Dynamic Floating Body Control SOI CMOS for Power Managed Multimedia ULSIs
- A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- A Long Data Retention SOI DRAM with the Body Refresh Function (Special Issue on New Concept Device and Novel Architecture LSIs)
- SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories