Dynamic Floating Body Control SOI CMOS for Power Managed Multimedia ULSIs
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概要
- 論文の詳細を見る
A novel body potential-controlling technique for floating SOI CMOS circuits is proposed and verified in this study. High-speed operation is realized with a small chip size by using body-floating SOI transistors. The use of this technique allows the threshold voltage of the body-floating transistors to be varied transitionally. Therefore, the standby current of SOI CMOS logic is reduced to less than 1/50th of that required by the non-controlled operation of the body potential, and the logic operates at a high speed during the active period. There is no speed penalty for the recovery operation from the standby mode. This technique supports sub-1V operation, which will be required by future battery-operated devices with wide-range covering.
- 社団法人電子情報通信学会の論文
- 2001-02-01
著者
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MORISHITA Fukashi
Renesas Technology Corp.
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OZAKI Hideyuki
Renesas Technology Corp.
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Ozaki H
Renesas Technology Corp.
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Ozaki Hideyuki
Ulsi Laboratory Mitsubishi Electric Corporation
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Fujishima Kazuyasu
Ulsi Development Center Mitsubishi Electric Corp.
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MORISHITA Fukashi
with ULSI Development Center, Mitsubishi Electric Corporation
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ARIMOTO Kazutami
with ULSI Development Center, Mitsubishi Electric Corporation
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FUJISHIMA Kazuyasu
System LSI Development Center, Mitsubishi Electric Corporation
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OZAKI Hideyuki
with ULSI Development Center, Mitsubishi Electric Corporation
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YOSHIHARA Tsutomu
Display Devices Works, Mitsubishi Electric Corporation
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Arimoto Kazutami
System Core Technology Div. Renesas Technology Corp.
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Morishita Fukashi
System Core Technology Div. Renesas Technology Corp.
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Morishita Fukashi
Renesas Technology Corporation
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Yoshihara Tsutomu
Graduate School Of Information Production And Systems Waseda Univ.
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