A 0.18 ★m 32 Mb Embedded DRAM Macro for 3-D Graphics Controller

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概要

• 論文の詳細を見る

• A 23.3 mm^2 32Mb embedded DRAM (eDRAM) macro has been fabricated using 0.18 ★m triple-well 4-metal embedded DRAM process technology to realize an accelerated 3-D graphics controller. The array architecture, using a dual-port sense amplifier, achieves the column access latency of two cycles at 222 MHz and a peak data rate of 14.2 ★ 4GB/s at 4 macros. The process cost has been kept low by using VT-MOS circuit technology and taking advantage of a characteristic of dual-gate oxide process technology. A tRAC of 11.6ns at 2.0V is achieved using a 'pre-detect redundancy' circuit.

• 社団法人電子情報通信学会の論文
• 2002-09-01

著者

• YAMAZAKI Akira

  Renesas Technology

• MOROOKA Yoshikazu

  Renesas Technology

• MORISHITA Fukashi

  Renesas Technology Corp.

• WATANABE Naoya

  Renesas Technology Corp.

• WAKE Setsuo

  Renesas Technology Corp.

• OZAKI Hideyuki

  Renesas Technology Corp.

• MORISHITA Fukashi

  ULSI Development Center, Mitsubishi Electric Corporation

• ARIMOTO Kazutami

  ULSI Development Center, Mitsubishi Electric Corporation

• FUJINO Takeshi

  ULSI Laboratory, Mitsubishi Electric Corporation

• Wake Setsuo

  Ulsi Development Center Mitsubishi Electric Corp.

• Noda H

  System Core Technology Div. System Solution Business Group Renesas Technology Co.

• Ozaki H

  Renesas Technology Corp.

• Dosaka K

  System Core Technology Div. System Solution Business Group Renesas Technology Co.

• Inoue Kazunari

  Custom Lsi Business Unit Custom Lsi Design Dept. 1 Renesas Technology Corporation

• YAMAZAKI Akira

  ULSI Development Center, Mitsubishi Electric Corp.

• INOUE Kazunari

  LSI Division, Mitsubishi Electric Corp.

• HAYASHI Isamu

  ULSI Development Center, Mitsubishi Electric Corp.

• NODA Hideyuki

  ULSI Development Center, Mitsubishi Electric Corp.

• WATANABE Naoya

  ULSI Development Center, Mitsubishi Electric Corp.

• DOSAKA Katsumi

  ULSI Development Center, Mitsubishi Electric Corp.

• MOROOKA Yoshikazu

  ULSI Development Center, Mitsubishi Electric Corp.

• SOEDA Shinya

  ULSI Development Center, Mitsubishi Electric Corp.

• FUJISHIMA Kazuyasu

  ULSI Development Center, Mitsubishi Electric Corp.

• OZAKI Hideyuki

  ULSI Development Center, Mitsubishi Electric Corp.

• Ozaki Hideyuki

  Ulsi Laboratory Mitsubishi Electric Corporation

• Fujino Takeshi

  Wood Research Institute, Kyoto University

• Fujino T

  Wood Research Institute Kyoto University

• Fujino Takeshi

  Department Of Electric And Electronic Engineering Ritsumeikan University

• Fujino Takeshi

  Ulsi Laboratory Mitsubishi Electric Corporation

• Soeda Shinya

  Ulsi Development Center Mitsubishi Electric Corp.

• Hayashi I

  Renesas Technology Corp.

• Fujishima Kazuyasu

  Ulsi Development Center Mitsubishi Electric Corp.

• Noda H

  Hitachi Ltd. Kokubunji‐shi Jpn

• Yamazaki A

  Renesas Technology

• YAMAZAKI AKIRA

  Neonatal Care Center, Niigata City General Hospital

• Arimoto Kazutami

  System Core Technology Div. Renesas Technology Corp.

• Arimoto Kazutami

  Ulsi Development Center Mitsubishi Electric Corporation

• Morishita Fukashi

  System Core Technology Div. Renesas Technology Corp.

• Morishita Fukashi

  Renesas Technology Corporation

• Morishita Fukashi

  Ulsi Development Center Mitsubishi Electric Corp.

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