An Efficient Back-Bias Generator with Hybrid Pumping Circuit for 1.5-V DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
スポンサーリンク
概要
- 論文の詳細を見る
An efficient back-bias (V_<bb>) generator with a newly introduced hybrid pumping circuit (HPC) is described. This system attains a V_<bb> level of -1.44 V at V_<cc> = 1.5 V, compared to a conventional system in which V_<bb> only reaches -0.6 V. HPC can pump without the threshold voltage (V_<th>) loss that conventional systems suffer. HPC is indispensable for 1.5-V DRAM's, because a V_<bb> level lower than -1.0 V is necessary to meet the limitations of the V_<th> of the access transistor. HPC uses one NMOS and one PMOS pumping transistor. By adopting a triple-well structure at the pumping circuit area, the NMOS can be employed as a pumping transistor without minority carrier injection.
- 社団法人電子情報通信学会の論文
- 1994-05-25
著者
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OZAKI Hideyuki
Renesas Technology Corp.
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Ozaki H
Renesas Technology Corp.
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MOROOKA Yoshikazu
ULSI Development Center, Mitsubishi Electric Corp.
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OZAKI Hideyuki
ULSI Development Center, Mitsubishi Electric Corp.
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Ozaki Hideyuki
Ulsi Laboratory Mitsubishi Electric Corporation
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FURUTANI Kiyohiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Morooka Yoshikazu
The Ulsi Laboratory Mitsubishi Electric Corporation
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Miyamoto H
Nagoya Inst. Technol. Nagoya‐shi Jpn
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Miyamoto Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Tsukikawa Yasuhiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Kajimoto Takeshi
Kita-Itami Works, Mitsubishi Electric Corporation
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Okasaka Yasuhiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Tsukikawa Yasuhiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Furutani K
Renesas Technol. Corp. Itami‐shi Jpn
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Kajimoto Takeshi
Kita-itami Works Mitsubishi Electric Corporation
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Okasaka Yasuhiko
Ulsi Laboratory Mitsubishi Electric Corporation
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