Furutani K | Renesas Technol. Corp. Itami‐shi Jpn
スポンサーリンク
概要
関連著者
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OZAKI Hideyuki
Renesas Technology Corp.
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Ozaki H
Renesas Technology Corp.
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Ozaki Hideyuki
Ulsi Laboratory Mitsubishi Electric Corporation
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FURUTANI Kiyohiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Furutani K
Renesas Technol. Corp. Itami‐shi Jpn
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OZAKI Hideyuki
ULSI Development Center, Mitsubishi Electric Corp.
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HIDAKA Hideto
ULSI Laboratory, Mitsubishi Electric Corporation
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ASAKURA Mikio
ULSI Laboratory, Mitsubishi Electric Corporation
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Hidaka H
Yrp Mobil Telecommunications Key Technol. Res. Lab. Co. Ltd. Yokosuka‐shi Jpn
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Hidaka Hideto
Ulsi Laboratory Mitsubishi Electric Corporation
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Asakura Mikio
Ulsi Laboratory Mitsubishi Electric Corporation
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Ooishi T
Ulsi Laboratory Mitsubishi Electric Corporation
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Oashi Toshiyuki
Ulsi Development Center Mitsubishi Electric Corporation
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Miyamoto H
Nagoya Inst. Technol. Nagoya‐shi Jpn
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MOROOKA Yoshikazu
ULSI Development Center, Mitsubishi Electric Corp.
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OOISHI Tsukasa
ULSI Laboratory, Mitsubishi Electric Corporation
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HAMADE Kei
the ULSI Laboratory, Mitsubishi Electric Corporation
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YASUDA Kenichi
the ULSI Laboratory, Mitsubishi Electric Corporation
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Morooka Yoshikazu
The Ulsi Laboratory Mitsubishi Electric Corporation
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Hamade Kei
The Ulsi Laboratory Mitsubishi Electric Corporation
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Yasuda Kenichi
The Ulsi Laboratory Mitsubishi Electric Corporation
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Ooishi Tsukasa
Ulsi Laboratory Mitsubishi Electric Corporation
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Miyamoto Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Komiya Yuichiro
The Ulsi Laboratory Mitsubishi Electric Corporation
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YAMADA Michihiro
ULSI Development Center, Mitsubishi Electric Corporation
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Ozaki Hideyuki
The Ulsi Laboratory Mitsubishi Electric Corporation
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OOISHI Tsukasa
the ULSI Laboratory, Mitsubishi Electric Corporation
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KOMIYA Yuichiro
the ULSI Laboratory, Mitsubishi Electric Corporation
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ASAKURA Mikio
the ULSI Laboratory, Mitsubishi Electric Corporation
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FURUTANI Kiyohiro
the ULSI Laboratory, Mitsubishi Electric Corporation
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KATO Tetsuo
the ULSI Laboratory, Mitsubishi Electric Corporation
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HIDAKA Hideto
the ULSI Laboratory, Mitsubishi Electric Corporation
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Asakura Mikio
The Ulsi Laboratory Mitsubishi Electric Corporation
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Yamauchi Tadaaki
ULSI Laboratory, Mitsubishi Electric Corporation
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Tanaka Koji
ULSI Laboratory, Mitsubishi Electric Corporation
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Miyamoto Hiroshi
Kita-Itami Works, Mitsubishi Electric Corporation
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Komiya Yuichiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Hamade Kei
ULSI Laboratory, Mitsubishi Electric Corporation
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Asakura Mikio
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Yasuda Kenichi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Furutani Kiyohiro
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Hidaka Hideto
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Tsukikawa Yasuhiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Kajimoto Takeshi
Kita-Itami Works, Mitsubishi Electric Corporation
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Okasaka Yasuhiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Tsukikawa Yasuhiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Kajimoto Takeshi
Kita-itami Works Mitsubishi Electric Corporation
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Okasaka Yasuhiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Yamada Michihiro
Ulsi Laboratory Mitsubishi Electric Corporation
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Yamada Michihiro
Ulsi Development Center Mitsubishi Electric Corporation
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YAMAUCHI Tadaaki
the ULSI Laboratory, Mitsubishi Electric Corporation
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Yamauchi T
Mitsubishi Electric Corp. Itami‐shi Jpn
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Yamauchi Tadaaki
Ulsi Development Center Mitsubishi Electric Corporation
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Tanaka Koji
Ulsi Laboratory Mitsubishi Electric Corporation
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Kato Tetsuo
The Ulsi Laboratory Mitsubishi Electric Corporation
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Hidaka Hideto
The Ulsi Laboratory Mitsubishi Electric Corporation
著作論文
- A Board Level Parallel Test Circuit and a Short Circuit Failure Repair Circuit for High-Density, Low-Power DRAMs (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- A Mixed-Mode Voltage Down Converter with Impedance Adjustment Circuitry for Low-Voltage High-Frequency Memories
- Fully Self-Timing Data-Bus Architecture for 64-Mb DRAMs
- An Automatic Temperature Compensation of Internal Sense Ground for Subquarter Micron DRAM's(Special Issue on the 1994 VLSI Circuits Symposium)
- An Efficient Back-Bias Generator with Hybrid Pumping Circuit for 1.5-V DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))