Oashi Toshiyuki | Ulsi Development Center Mitsubishi Electric Corporation

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著作論文

Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
A Board Level Parallel Test Circuit and a Short Circuit Failure Repair Circuit for High-Density, Low-Power DRAMs (Special Issue on Circuit Technologies for Memory and Analog LSIs)
A Mixed-Mode Voltage Down Converter with Impedance Adjustment Circuitry for Low-Voltage High-Frequency Memories
An Automatic Temperature Compensation of Internal Sense Ground for Subquarter Micron DRAM's(Special Issue on the 1994 VLSI Circuits Symposium)
A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))

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