MORISHITA Fukashi | Renesas Technology Corp.

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概要

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著作論文

A Study of Sense-Voltage Margins in Low-Voltage-Operating Embedded DRAM Macros(Integrated Electronics)
A Low Power Embedded DRAM Macro for Battery-Operated LSIs(Power Optimization)(VLSI Design and CAD Algorithms)
Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
An Embedded DRAM Hybrid Macro with Auto Signa Management and Enhanced-on-Chip Tester
A 0.18 ★m 32 Mb Embedded DRAM Macro for 3-D Graphics Controller
A Voltage Scalable Advanced DFM RAM with Accelerated Screening for Low Power SoC Platform(Next-Generation Memory for SoC,VLSI Technology toward Frontiers of New Market)
A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC(Novel Device Architectures and System Integration Technologies)
On-Chip Memory Power-Cut Scheme Suitable for Low Power SoC Platform
A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI(Memory,Low-Power, High-Speed LSIs and Related Technologies)
An On-Chip Supply-Voltage Control System Considering PVT Variations for Worst-Caseless Lower Voltage SoC Design(Novel Device Architectures and System Integration Technologies)
Dynamic Floating Body Control SOI CMOS for Power Managed Multimedia ULSIs
A Long Data Retention SOI DRAM with the Body Refresh Function (Special Issue on New Concept Device and Novel Architecture LSIs)
SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories

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