A Long Data Retention SOI DRAM with the Body Refresh Function (Special Issue on New Concept Device and Novel Architecture LSIs)
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概要
- 論文の詳細を見る
SOI (Silicon On Insulator) transistors have certain problems due to the floating body. These problems become remarkable in the memory cell transistors of DRAMs. We Propose a new refresh function and circuits for SOI DRAMs. And we obtained the result that this refresh function removed the injected hole from the body region and gave stable body potential by the device simulation. Therefore we can realize the long data retention characteristics for SOI DRAMs without an increase of the memory cell area or an additional refresh operation.
- 社団法人電子情報通信学会の論文
- 1997-07-25
著者
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MORISHITA Fukashi
Renesas Technology Corp.
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MORISHITA Fukashi
ULSI Development Center, Mitsubishi Electric Corporation
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Tsukude M
Ulsi Laboratory Mitsubishi Electric Corporation
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Tsukude Masaki
Ulsi Laboratory Mitsubishi Electric Corporation
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Yamagata T
Mitsubishi Electric Corp. Itami‐shi Jpn
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Yamagata Tadato
Ulsi Laboratory Mitsubishi Electric Corporation
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Arimoto Kazutami
System Core Technology Div. Renesas Technology Corp.
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Arimoto Kazutami
Ulsi Laboratory Mitsubishi Electric Corporation
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Arimoto Kazutami
Ulsi Development Center Mitsubishi Electric Corporation
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Morishita Fukashi
System Core Technology Div. Renesas Technology Corp.
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Tomishima S
Ulsi Laboratory Mitsubishi Electric Corporation
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Tomishima Shigeki
Ulsi Laboratory Mitsubishi Electric Corporation
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Morishita Fukashi
Renesas Technology Corporation
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Morishita Fukashi
Ulsi Development Center Mitsubishi Electric Corp.
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