Accomplishment of At-Speed BISR for Embedded DRAMs(Special Issue on Test and Verification of VLSI)

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概要

• 論文の詳細を見る

• The increase of test time of embedded DRAMs (e-DRAM) is one of the key issues of System-on-chip (SOC) device test. This paper proposes to put the repair analysis function on chip as Built In Self Repair (BISR). BISR is performed at 166 MHz as at-speed of e-DRAM with using low cost automatic test equipment (ATE). The area of the BISR is 1.7 mm^2. Using error storage table form contributes to realize small area penalty of repair analysis function. e-DRAM function test time by BISR was about 20% less than the conventional method at wafer level testing. Moreover, representative samples are produced to confirm repair analysis ability. The results show that all of the samples are actually repaired by repair information generated by BISR.

• 社団法人電子情報通信学会の論文
• 2002-10-01

著者

• Dosaka K

  System Core Technology Div. System Solution Business Group Renesas Technology Co.

• TANIZAKI Tetsushi

  The authors are with ULSI Development Center, Mitsubishi Electric Corp.

• NAGURA Yoshihiro

  The authors are with System LSI Division, Mitsubishi Electric Corp.

• Koide Tetsushi

  Research Institute For Nanodevice And Bio Systems Hiroshima University

• Koide Tetsushi

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• DOSAKA Katsumi

  Mitsubishi Electric Corporation ULSI Laboratory

• NAGURA Yoshihiro

  Mitsubishi Electric Corporation

• FUJIWARA Yoshinori

  Mitsubishi Electric Corporation

• FURUE Katsuya

  Mitsubishi Electric Corporation

• OHMITYA Ryuji

  Mitsubishi Electric Corporation

• KOMOIKE Tatsunori

  Mitsubishi Electric Corporation

• OKITAKA Takenori

  Mitsubishi Electric Corporation

• TANIZAKI Tetsushi

  Mitsubishi Electric Corporation

• ARIMOTO Kazutami

  Mitsubishi Electric Corporation

• KODA Yukiyoshi

  Mitsubishi Electric Corporation

• TADA Tetsuo

  Mitsubishi Electric Corporation

• Arimoto Kazutami

  System Core Technology Div. Renesas Technology Corp.

• Furue Katsuya

  The Authors Are With System Lsi Division Mitsubishi Electric Corp.

• Tanizaki Tetsushi

  The Authors Are With Ulsi Development Center Mitsubishi Electric Corp.

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• SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories
• Software-Based Parallel Cryptographic Solution with Massive-Parallel Memory-Embedded SIMD Matrix Architecture for Data-Storage Systems

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