A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
スポンサーリンク
概要
- 論文の詳細を見る
We propose an advanced DRAM array driving technique which can achieve low-voltage operation, which we call a well-synchronized sensing and equalizing method. This method sets the DRAM array free from the body effect, achieves a small influence of the short channel effect, and reduces the leakage current. The sense and restore amplifier and equalizer can operate rapidly under a low-voltage operating condition such as 1.0 V V_<CC>. Therefore, we can make determining the V_<th> easy for the satisfaction of the high-speed, the low-power dissipation, and a simple device structure. The well-synchronized sensing and equalizing method is applicable to low-voltage operating DRAM's with capacity of 256 Mbits and more.
- 社団法人電子情報通信学会の論文
- 1994-05-25
著者
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ARIMOTO Kazutami
ULSI Development Center, Mitsubishi Electric Corporation
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HIDAKA Hideto
ULSI Laboratory, Mitsubishi Electric Corporation
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FUJISHIMA Kazuyasu
Semiconductor Group, Mitsubishi Electric Corporation
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ASAKURA Mikio
ULSI Laboratory, Mitsubishi Electric Corporation
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Hidaka H
Yrp Mobil Telecommunications Key Technol. Res. Lab. Co. Ltd. Yokosuka‐shi Jpn
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Hidaka Hideto
Ulsi Laboratory Mitsubishi Electric Corporation
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Asakura Mikio
Ulsi Laboratory Mitsubishi Electric Corporation
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Oashi Toshiyuki
Ulsi Development Center Mitsubishi Electric Corporation
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Ooishi Tsukasa
Ulsi Laboratory Mitsubishi Electric Corporation
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Fujishima Kazuyasu
Ulsi Development Center Mitsubishi Electric Corp.
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Fujishima K
Mitsubishi Electric Co. Itami‐shi Jpn
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Tomishima Shigeki
ULSI Laboratory, Mitsubishi Electric Corporation
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Arimoto Kazutami
System Core Technology Div. Renesas Technology Corp.
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Arimoto Kazutami
Ulsi Development Center Mitsubishi Electric Corporation
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Tomishima Shigeki
Ulsi Laboratory Mitsubishi Electric Corporation
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