Hidaka H | Yrp Mobil Telecommunications Key Technol. Res. Lab. Co. Ltd. Yokosuka‐shi Jpn

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Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
A Board Level Parallel Test Circuit and a Short Circuit Failure Repair Circuit for High-Density, Low-Power DRAMs (Special Issue on Circuit Technologies for Memory and Analog LSIs)
A Mixed-Mode Voltage Down Converter with Impedance Adjustment Circuitry for Low-Voltage High-Frequency Memories
Studies on Phase Change Characteristics of Binary Mixtures of Erythritol and MgCl_2・6H_2O
New PCMs Prepared from Erythritol-Polyalcohols Mixtures for Latent Heat Storage between 80 and 100℃
Effect of Ultrasonic Irradiation Parameters on the Supercooling Relaxation Behavior of PCM
An Automatic Temperature Compensation of Internal Sense Ground for Subquarter Micron DRAM's(Special Issue on the 1994 VLSI Circuits Symposium)
A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
A Smart Design Methodology with Distributed Extra Gate-Arrays for Advanced ULSI Memories (Special Issue on LSI Memories)

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