Yamaguchi Y | Tohoku Univ. Sendai
スポンサーリンク
概要
関連著者
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Yamaguchi Y
Tohoku Univ. Sendai
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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Ohoyama K
Institute For Materials Research Tohoku University
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Ohoyama Kenji
Department Of Physics Faculty Of Science Tohoku University
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ONODERA Hideya
Institute for Materials Research, Tohoku University
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Ohyama Kenji
Imr Tohoku University
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OHOYAMA Kenji
Institute for Materials Research, Tohoku University
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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Yamauchi H
Superconductivity Research Laboratory Istec
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Yamauchi H
Istec Tokyo Jpn
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Ido K
Institute For Materials Research Tohoku University:(present Office)shlumberger K.k.
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YAMAUCHI Hiroki
Institute for Materials Research, Tohoku University
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Tobo A
Department Of Physics Graduate School Of Science Tohoku University
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Tobo Aya
The Institute Of Physical And Chemical Research(riken)
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Yamauchi Hisao
Superconductivity Research Laboratory Istec:(present Address)research Laboratory Of Engineering Mate
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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Inoue Y
National Defense Acad. Yokosuka Jpn
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TOBO Aya
Department of Physics, Graduate School of Science, Tohoku University
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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OHASHI Masayoshi
Institute for Materials Research,Tohoku University
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Kaneko K
Japan Atomic Energy Agency Ibaraki
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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ONIMARU Takahiro
Institute for Solid State Physics, University of Tokyo
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ISHIMOTO Kenichi
Institute for Materials Research, Tohoku University
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Kobayashi Hisao
Department Of Physics Graduate School Of Science Tohoku University
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Onimaru T
Univ. Tokyo Chiba
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Kosaka Masashi
Institute For Materials Research Tohoku University
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Kosaka Masashi
Department Of Physics Saitama University
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INDOH Kentaro
Institute for Materials Research, Tohoku University
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TOBO Aya
Institute for Materials Research, Tohoku University
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Kosaka M
Saitama Univ. Saitama
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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JOACHIM Hans-Oliver
ULSI Laboratory, Mitsubishi Electric Corporation
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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Tobo Aya
Institute For Materials Research Tohoku University
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ONODERA Hideya
Department of Physics, Graduate School of Science, Tohoku University
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Tobo Aya
Department Of Physics Graduate School Of Science Tohoku University
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KANEKO Koji
Advanced Science Research Center, Japan Atomic Energy Agency
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KANEKO Koji
Institute for Materials Research, Tohoku University
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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IPPOSHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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TSUBOUCHI Natsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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Ueda K
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
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YAMAGUCHI Yasuo
IMR, Tohoku University
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INOUE Kazuko
Faculty of Science and Technology, Ryukoku University
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MORII Yukio
Japan Atomic Energy Research Institute
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UEDA Kimio
System LSI Development Center, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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HIRAO Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Morii Y
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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Morii Y
Jaeri Tokai
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OHASHI Masayoshi
IMR, Tohoku University
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FUJII Hironobu
Faculty of Integrated Arts and Sciences,Hiroshima University
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TAKABATAKE Toshiro
Faculty of Integrated Arts and Sciences,Hiroshima University
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KAWANAKA Hirofumi
Faculty of Integrated Arts and Sciences,Hiroshima University
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KONNO Junya
Institute for Materials Research, Tohoku University
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Nagayama Y
Research Institute For Applied Mechanics Kyushu University
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Nagashima Y
Graduate School Of Frontier Sciences The University Of Tokyo
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Nagashima Yoshihiko
Graduate School Of Frontier Sciences The Univ. Of Tokyo
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Nagashima Yoshihiko
Research Institute For Applied Mechanics Kyushu University
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FUJITA Toshizo
Faculty of Science,Hiroshima University
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Funahashi Satoru
Jaeri Tokai
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YAMAGUCHI Yasutoshi
Faculty of Science,Hiroshima University
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MORISHITA Fukashi
Renesas Technology Corp.
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Sakurai J
Toyama Univ. Toyama Jpn
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Funahashi S
Japan Atomic Energy Res. Inst. Ibaraki
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Murata Akifumi
Institute For Materials Research Tohoku University:(present Address)toshiba Corporation Fuchu Works
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OHOYAMA Kenji
IMR, Tohoku University
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NAKAMURA Yoji
Faculty of Science and Technology,Ryukoku University
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櫻井 純
徳島文理大・薬・微生物
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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MORISHITA Fukashi
ULSI Development Center, Mitsubishi Electric Corporation
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EIMORI Takahisa
ULSI Development Center, Mitsubishi Electric Corporation
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OASHI Toshiyuki
ULSI Development Center, Mitsubishi Electric Corporation
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ARIMOTO Kazutami
ULSI Development Center, Mitsubishi Electric Corporation
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YASUOKA Akihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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FUJINO Takeshi
ULSI Laboratory, Mitsubishi Electric Corporation
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KATO Takaaki
ULSI Laboratory, Mitsubishi Electric Corporation
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Takabatake Toshiro
Faculty Of Integrated Arts And Sciences Hiroshima University
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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Inoue K
Technol. Res. Inst. Osaka Prefecture Osaka Jpn
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Nishi M
Neutron Scattering Laboratory Issp University Of Tokyo
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Nishi Masakazu
Neutron Scattering Laboratory Institute For Solid State Physics The University Of Tokyo
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Nishi Masakazu
Institute For Solid State Physics University Of Tokyo
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Nishi Masakazu
Institute For Solid State Phrsics University Of Tokyo
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Tsvyashchenko A.V.
LF Vereshchangin Institute of High Pressure Physics
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Nishi Masakazu
Issp University Of Tokyo
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KATANO Susumu
Advanced Science Research Center, Japan Atomic Energy Agency
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Katano S
Advanced Science Research Center Japan Atomic Energy Agency:(present Office)department Of Physics Sa
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MATSUDA Masaaki
Advanced Science Research Center, Japan Atomic Energy Research Institute
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KADOWAKI Hiroaki
Department of Physics, Tokyo Metropolitan University
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OGURO Isamu
Grenoble
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HASHIMOTO Yuzo
Department of Physics, Fukuoka University of Education
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SHIGEOKA Toru
Department of Physics, Yamaguchi University
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IWATA Nobuo
Department of Physics, Yamaguchi University
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YOSHIZAWA Hideki
ISSP, University of Tokyo
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OHARA Yasuaki
ISSP, University of Tokyo
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NISHI Masakazu
ISSP, University of Tokyo
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MURATA Akifumi
IMR, Tohoku University
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ONODERA Hideya
IMR, Tohoku University
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OGURO Isamu
Institute for Solid State Physics,University of Tokyo
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Nishi Masakazu
Neutron Scattering Laboratory Issp The University Of Tokyo
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SHIMADA Hiroyuki
Institute for Materials Research, Tohoku University
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TSUCHIYA Yoshinori
Graduate School of Engineering, Nagoya University
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FUNAHASHI satoru
Department of Physics,Japan Atomic Energy Research Institute Tokai
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Aoki Yuji
Department Of Physics Faculty Of Science:department Of Physics Faculty Of Science Tokyo Metropolitan
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Funahashi Satoru
Department Of Physics Japan Atomic Energy Research Institute
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AOKI Yuji
Faculty of Science,Hiroshima University
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SUZUKI Takashi
Faculty of Science,Hiroshima University
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SAKURAI Junji
Faculty of Science,Hiroshima University
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MIYATA shun-echi
Faculty of Integrated Arts and Sciences
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FUJIWARA Hiroshi
Faculty of Engineering, Kochi University of Technology
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Miyata Shun-echi
Faculty Of Integrated Arts And Sciences Hiroshima University
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Yoshizawa H
Matsumoto Dental Univ. Nagano Jpn
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Maple M
Univ. California California Usa
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Tokumoto M
Electrotechnical Lab. Ibaraki
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Tokumoto H
Electrotechnical Laboratory
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Iwata N
Istec Tokyo
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Iwata N
Department Of Physics Faculty Of Science Yamaguchi University
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Iwata N
Kyushu Univ. Fukuoka
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Sato Hiromi
Riken
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Shigeoka T
Yamaguchi Univ. Yamaguchi
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Shigeoka Toru
Department Of Physics Faculty Of Science Yamaguchi University
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Ohara Yasuaki
Issp University Of Tokyo
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Hashimoto Yuzo
Department Of Physics Fukuoka University Of Education
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Katano Susumu
Advanced Science Research Center Japan Atomic Energy Research Institute:(present Office)department O
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ENAMI Kazuyuki
Faculty of Science and Technology, Ryukoku University
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MATSUOKA Yuki
Japan Atomic Energy Research Institute
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INOUE Kanryu
Materials Science and Technology, University of Washington
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INOUE Kazuo
Faculty of Science and Technology,Ryukoku University
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YAMAGUCHI Yasuo
IMR,Tohoku University
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OHYAMA Kenji
IMR,Tohoku University
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OHASHI Masayoshi
Faculty of Engineering,Yamagata University
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A.V. TSVYASHCHENKO
LF Vereshchagin Institute of High Pressure Physics,Troisk,Moscow Region
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L. FOMICHEVA
LF Vereshchagin Institute of High Pressure Physics,Troisk,Moscow Region
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山名 早人
電子技術総合研究所情報アーキテクチャ部
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Maeda M
Department Of Engineering Physics Electronics And Mechanics Graduate School Of Engineering Nagoya In
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YAMAGUCHI Yasuo
the ULSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI Takashi
the ULSI Development Center, Mitsubishi Electric Corporation
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UEDA Kimio
the ULSI Development Center, Mitsubishi Electric Corporation
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MASHIKO Koichiro
the ULSI Development Center, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
the ULSI Development Center, Mitsubishi Electric Corporation
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INUISHI Masahide
the ULSI Development Center, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
the ULSI Development Center, Mitsubishi Electric Corporation
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NAKAYAMA Kouichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAOKA Hiromichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAI Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
ONRI, AIST
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HORINO Yuji
ONRI, AIST
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KOMURASAKI Hiroshi
System LSI Division, Mitsubishi Electric Corporation
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SATO Hisayasu
System LSI Development Center, Mitsubishi Electric Corporation
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YAMAMOTO Kazuya
System LSI Development Center, Mitsubishi Electric Corporation
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SASAKI Nagisa
System LSI Division, Mitsubishi Electric Corporation
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MIKI Takahiro
System LSI Division, Mitsubishi Electric Corporation
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HORIBA Yasutaka
Semiconductor Group, Mitsubishi Electric Corporation
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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WADA Yoshiki
System LSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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HIRANO Yuuichi
ULSI Development Center, Mitsubishi Electric Corporation
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FERNANDEZ Warren
ULSI Development Center, Mitsubishi Electric Corporation
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YAMADA Michihiro
ULSI Development Center, Mitsubishi Electric Corporation
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IMAI Yukari
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYAMOTO Shoichi
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYAMOTO Shouichi
ULSI Laboratory, Mitsubishi Electric Corporation
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SUMA Katsuhiro
Semiconductor Group, Mitsubishi Electric Corporation
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TSURUDA Takahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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HIROSE Masakazu
Daioh Electric Corporation
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HIDAKA Hideto
ULSI Laboratory, Mitsubishi Electric Corporation
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FUJISHIMA Kazuyasu
Semiconductor Group, Mitsubishi Electric Corporation
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Takahashi Jun
ULSI Laboratory, Mitsubishi Electric Corporation
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Yamaguchi Takehisa
ULSI Laboratory, Mitsubishi Electric Corporation
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Wada Tomohisa
ULSI Laboratory, Mitsubishi Electric Corporation
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Tusbouchi Natsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGICHI Yasuo
Institute for Materials Research, Tohoku University
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YAMAFUCHI Yasuo
Institute for Materials Research, Tohoku University
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SAKO Shuuichi
Institute for Materials Research, Tohoku University
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TOBA Aya
Institute for Materials Research, Tohoku University
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KUNll Satoru
Department of Physics, Graduate School of Science, Tohoku University
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KANOUCHI Tomonori
Institute for Materials Research, Tohoku University
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NEMOTO Keiji
Institute for Materials Research, Tohoku University
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KAJITANI Tsuyoshi
Faculty of Engineering, Tohoku University
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Nakamura Shintarou
Research Institute for Scientific Measurements,Tohoku University
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Goto Terutaka
Research Institute for Scientific Measurements,Tohoku University
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Katano S
Department Of Physics Japan Atomic Energy Research Institute
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ADACHI Yoshiya
Faculty of Engineering Yamagata University
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TOKUMOTO Madoka
Electrotechnical Laboratory
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KANEKO Takejiro
The Institue for Materials Research, Tohoku University
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Sato H
Riken
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Iwata Nobuo
Department Of Physics Yamaguchi University
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Iwata Nobuo
Department Of Biology Faculty Of Science Osaka University
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田中 拓
神大
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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Imai Y
National Inst. Materials And Chemical Res. Ibaraki Jpn
著作論文
- Magnetic Phase Transition in DyNi_2Si_2
- Long Periodic Magnetic Structure in CeB_2C_2
- Magnetic Properties of Tetragonal Ce_Lu_xB_2C_2 (0 ≤ x ≤ 0.31) Compounds(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Magnetic Properties of Tetragonal Ce_Lu_xB_2C_2 (0≦x≦0.31) Compounds
- Magnetic Order-Order Transition in Tetragonal ErB_2C_2
- Systematic Study on Crystal Structures in Tetragonal RB_2C_2 (R=Rare Earth) Compounds
- Antiferroquadrupolar Ordering in the Pseudo-Binary Tetragonal Compounds Ho_Dy_xB_2C_2 : Condensed Matter: Electronic Properties, etc.
- Physical and Structural Properties of Ternary Uranium Compounds in the U-Ni-Sn and U-Ni-In Systems
- Magnetic-Field-Induced Martensitic Transformation in Ni_2MnGa-Based Alloys : Condensed Matter: Structure, etc.
- Magnetic Structure of C14-Laves Phase DyMn_2
- Long Periodic Magnetic Structure in CeB_2C_2
- Anomalous Magnetic Ordering Phenomena in Tetragonal TbB_2C_2 Observed by Neutron Diffraction(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications
- Comparison of Standard and Low-Dose SIMOX Substrates for 0.15μm SOI MOSFET Applications
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influemce on Short-Channel Effects in SOI MOSFET's
- Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate
- Anomalous Antiferromagnetic Properties of the Tetragonal Compound, TbB_2C_2
- Neutron Powder Diffraction Study on B-C Network Atomic Arrangements in Tetragonal CeB_2C_2
- Characteristic Magnetic Structure due to Antiferroquadrupolar Ordering in Ho^B_2C_2 : Condensed Matter: Electronic Properties, etc.
- Antiferromagnetic Structure with the Uniaxial Anisotropy in the Tetragonal LaB_2C_2 Type Compound,NdB_2C_2 : Condensed Matter: Electronic Properties, etc.
- Antiferroquadrupolar Ordering in DyB_2C_2 Studied by ^Dy Mossbauer Spectroscopy : Condensed Matter: Electronic Properties, etc.
- Effects of Y Dilution on the Antiferroquadrupolar Ordering in the Tetragonal Compound DyB_2C_2 : Condensed Matter Electronic Properties, etc.
- 161^y Mossbauer Spectroscopic Study of the Ferroquadrupolar Ordering Compound DyB_6 : Condensed Matter: Electronic Properties, etc.
- Anomalous Magnetic Phase Diagrams of HoB_2C_2: Antiferroquadrupolar Ordering in the Magnetic Phase
- Neutron Powder Diffraction on Ce^B_2C_2 and Nd^B_2C_2:A New Model for the Tetragonal Crystal Structure
- Antiferroquadrupolar Ordering and Magnetic Properties of the Tetragonal DyB_2C_2 Compound
- The New Neutron Powder Diffractometer with a Multi-Detector System for High-Efficiency and High-Resolution Measurements
- Crystalline Electric Field and Magnetic Properties of the TmCu_2Si_2 Intermetallics
- ^Dy and ^Gd Mossbauer Spectroscopy of the RTC_2 Intermetallics (R=Dy, Gd ; T=Ni, Co)
- Neutron Diffraction Study of C14-Laves Phase TbMn_2
- ^Dy Mossbauer Spectroscopy of the Intermetallic Compounds DyNi_2Si_2, DyNi_2Ge_2 and DyAg_2Si_2
- Magnetic Behavior of Helical Magnet Fe_Co_Si
- Magnetic Properties of Ternary DyMn_2X_2 Compounds (X=Si and Ge)(Magnetism)
- Itinerant Electron Ferromagnetism in Fe_Co_xSi Studied by Polarized Neutron Diffraction
- Anomalous Magnetic,Transport and Thermal Properties in the Half-Metallic Magnet UNiSn
- Neutron Diffraction Study of Shape Memory Alloys (Proceedings of the 1st International Symposium on Advanced Science Research(ASR-2000), Advances in Neutron Scattering Research)
- Neutron Diffraction Measurements of Inner Local Strain of Fatigued Carbon Steel
- Magnetic Structure of Rhombohedral Cr_2Se_3
- Performance of a Torque Magnetometer in High Magnetic Fields using a Hybrid Magnet
- Message-Based Efficient Remote Memory Access on a Highly Parallel Computer EM-X (Special Issue on Architectures, Algorithms and Networks for Massively parallel Computing)
- Successive Antiferromagnetic Transitions and Magnetic Susceptibility of YBa_2Cu_Co_xO_y
- Design of the Dataflow Single-Chip Processor EMC-R