Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influemce on Short-Channel Effects in SOI MOSFET's

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-28

著者

• YAMAGUCHI Yasuo

  Institute for Materials Research, Tohoku University

• Yamaguchi Y

  Tohoku Univ. Sendai

• Yamaguchi Y

  Kumamoto Techno Res. Park Kumamoto Jpn

• YAMAGUCHI Yasuo

  ULSI Laboratory, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• TSUBOUCHI Natsuro

  ULSI Laboratory, Mitsubishi Electric Corporation

• JOACHIM Hans-Oliver

  ULSI Laboratory, Mitsubishi Electric Corporation

• Tusbouchi Natsuro

  ULSI Laboratory, Mitsubishi Electric Corporation

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• Joachim Hans-oliver

  Ulsi Laboratory Mitsubishi Electric Corporation

• Yamaguchi Y

  Central Workshop Osaka University

• Tsubouchi Natsuro

  Lsi Research And Development Laboratory Mitusbishi Electric Corporation

• Inoue Y

  Ntt Access Network Service Systems Laboratories Ntt Corporation

• Tsubouchi N

  Ulsi Dev. Center Hyogo Jpn

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

• Tusbouchi Natsuro

  Ulsi Laboratory Mitsubishi Electric Corporation

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