A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-01
著者
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TSUBOUCHI Natsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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Arima H
Mitsubishi Electric Corp. Hyogo Jpn
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Arima Hideaki
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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Ohi Makoto
LSI Research and Development Laboratory, Mitsubishi Corporation
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Matsukawa Takayuki
LSI Research and Development Laboratory, Mitsubishi Corporation
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Tsubouchi Natsuro
LSI Research and Development Laboratory, Mitsubishi Corporation
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Ajika Natuo
LSI Research and Development Laboratory, Mitusbishi Electric Corporation
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Tsubouchi Natsuro
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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Tsubouchi Natsuro
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Ohi Makoto
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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Ajika N
Memory Ic Division Mitsubishi Electric Corporation
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Matsukawa T
National Institute Of Advanced Industrial Science And Technology
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Tsubouchi N
Ulsi Dev. Center Hyogo Jpn
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Matsukawa T
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
関連論文
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influemce on Short-Channel Effects in SOI MOSFET's
- Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate
- Property of Radiation-Induced Defects in Germanium Single Crystals
- Full Multiple-Scattering Approach to Na K-Edge XANES of NaCl-KCl Mixed Crystal
- Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching
- Nonscalability of Alpha-Particle-Induced Charge Collection Area
- Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- Optimization of Nitridation and Reoxidation Conditions for EEPROM^* Tunneling Dielectric
- A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory
- Point Defects in Cubic Boron Nitride after Neutron Irradiation
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
- Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
- New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
- Application of Proximity Effect Correction Usirng Pattern-Area Density to Patterning on a Heavy-Metal Substrate and the Cell-Projection Exposure
- Improved Array Architectures of DINOR for 0.5 μm 32 M and 64 Mbit Flash Memories (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Memory Array Architecture and Decoding Scheme for 3 V Only Sector Erasable DINOR Flash Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Chemical Bonds at and Near the SiO_2/Si Interface
- Optical Absorption in Silicon Oxide Film Near the SiO_2/Si Interface
- Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
- Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
- Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
- Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy
- CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
- Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
- Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
- Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
- The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
- A 0.4 μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories
- Low-Temperature Characteristics of Buried-Channel Charge-Coupled Devices
- Cationic Core Excitons in NaBr and MgBr_2
- X-Ray K Absorption Edge Structures of Chlorine Ion in [CoCl_2(en)_2]NO_3,[CoCl_2(en)_2]Cl and [Co (en)_3]Cl_3・3H_2O
- Review of Device Technologies of Flash Memories(Special Issue on Nonvolatile Memories)