Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-11-15

著者

• Shimizu Masahiro

  Ulsi Development Center Mitsubishi Electric Corporation

• INUISHI Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation

• Arima H

  Mitsubishi Electric Corp. Hyogo Jpn

• Arima Hideaki

  Lsi Research And Development Laboratory Mitusbishi Electric Corporation

• Arima Hideaki

  Ulsi Development Center Mitsubishi Electric Corp.

• INUISHI Masahide

  Advanced Device Development Dept., Renesas Technology Corp.

• KUROI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• Hamaguchi C

  Osaka Univ. Osaka Jpn

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Shimizu M

  Advanced Industrial Science And Technology (aist) Power Electronics Research Center

• Shimizu Mitsuaki

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• ABE Haruhiko

  ULSI Development Center, Mitsubishi Electric Corporation

• Abe Haruhiko

  Ulsi Development Center Mitsubishi Electric Corporation

• Arima Hideaki

  Ulsi Development Center Mitsubishi Electric Corporation

• Kuroi Takashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Inuishi Masahide

  Advanced Device Development Dept. Renesas Technology Corp.

• Inuishi Masahide

  Ulsi Development Center Mitsubishi Electric Corporation

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