A 90nm-node SOI Technology for RF Applications
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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HIRANO Yuuichi
Advanced Device Development Dept., Renesas Technology Corp.
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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MAEGAWA Shigeto
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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OHJI Yuzuru
Advanced Device Development Dept., Renesas Technology Corp.
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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HIRANO Yoichi
National Institute of Advanced Industrial Science and Technology (AIST)
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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IKEDA Tatsuhiko
Advanced Device Development Dept., Renesas Technology Corp.
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CHEN Daniel
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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YOSHIMURA Tsutomu
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Chen Daniel
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Ohji Yuzuru
Advanced Device Development Dept. Renesas Technology Corp.
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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Ikeda Tatsuhiko
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Yoshimura Tsutomu
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Ipposhi Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ohji Yuzuru
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hirano Yuuichi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Iwamatsu Toshiaki
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inuishi Masahide
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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