Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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Kito Hijiri
Department Of Physics Aoyama-gakuin University
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Inoue T
Tohoku Univ. Sendai Jpn
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Kudo Hiroshi
Institute Of Applied Physics University Of Tsukuba
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Inoue Tatsuya
Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect
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Inoue Tetsushi
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Inoue Takahito
Electrotechnical Laboratory
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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ISHIHARA Toyoyuki
Tandem Accelerator Center, University of Tsukuba
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INOUE Tomoyasu
Department of Electronic Engineering, Iwaki Meisei University
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Ohsuna Tetsu
Department Of Electronic Engineering Iwaki Meisei University
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FUKUSHO Taro
Institute of Applied Physics, University of Tsukuba
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Fukusho Taro
Institute Of Applied Physics University Of Tsukuba
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research
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Kanda H
Univ. Tsukuba Ibaraki
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