Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-12-30

著者

• Inoue T

  Tohoku Univ. Sendai Jpn

• Inoue T

  Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos

• Inoue Tatsuya

  Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect

• Inoue Tetsushi

  Research Laboratory Of Resources Utilization Tokyo Institute Of Technology

• SASAMORI Kenichiro

  Institute for Materials Research, Tohoku University

• Inoue Takahito

  Electrotechnical Laboratory

• ITOH Junji

  Electrotechnical Laboratory

• NAZUKA Yutaro

  Electrotechnical Laboratory

• YOKOYAMA Hiroshi

  Electrotechnical Laboratory

• KANEMARU Seigo

  Electrotechnical Laboratory

• SHIMIZU Keizo

  Electrotechnical Laboratory

• Shimizu K

  Department Of Physical Electronics Tokyo Institute Of Technology

• Kanemaru S

  Aist Ibaraki Jpn

• Kanemaru Seigo

  Nanoelectronics Research Institute Aist

• Kanemaru Seigo

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Kanemaru Seigo

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Kanemaru Seigo

  Tsukuba Laboratory Yaskawa Electric Co. Ltd.

• Itoh J

  Aist Ibaraki Jpn

• Itoh J

  Nanoelectronics Research Institute Aist

• Itoh Junji

  Tsukuba Laboratory Yaskawa Electric Co. Ltd.

• Shimizu K

  Electrotechnical Laboratory

• Shimizu Keizo

  Electrotechnical Lanoratory

• Shimizu Keizo

  Electrotechnical Labolatory

• Nazuka Yutaro

  Electrotechnical Laboratory:faculty Of Engineering Tokai University

• Shimizu K

  Univ. Tokyo Chiba Jpn

• Yokoyama H

  Ntt Corp. Kanagawa Jpn

• Inoue T

  Applied Laser Engineering Research Institute

• Sasamori Kenichiro

  Institute For Materials Research Tohoku University

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