Inoue Tetsushi | Research Laboratory Of Resources Utilization Tokyo Institute Of Technology

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著作論文

Direct Observation of Cadmium Arachidate Thin Films with Lateral and Normal Molecular Orientations by Superconducting Cryo-Electron Microscopy
Lattice Images of Langmuir-Blodgett Films of Cadmium Arachidate Obtained by Superconducting Cryo-Electron Microscope
Microstructure in LB Films of Long-Alkyl Nitroaniline Derivatives : Surfaces, Interfaces and Films
Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope
Fabrication of Cantilever with Ultrasharp and High-Aspect-Ratio Stylus for Scanning Maxwell-Stress Microscopy
Dielectric Properties of Pb-Based Perovskite Substituted by Ti for B-site at Microwave Frequencies
Low-Fire Bismuth-Based Dielectric Ceramics for Microwave Use
A Multilayered Piezoelectric Transformer Operating in the Third Order Longitudinal Mode and Its Application for an Inverter
High-Power Characteristics of Multilayer Piezoelectric Ceramic Transducers
Small Multilayer Piezoelectric Transformers with High Power Density : Characteristics of Second and Third-Mode Rosen-Type Transformers
High Power Transformer Employing Piezoelectric Ceramics
Low-Frequency Sound Source with Dual Bending Radiation Surfaces
Investigation of Disk Bender Low-Frequency Projector with Dual Radiation Surfaces
Surface Modification of Glassy Carbon by Pulsed Laser Irradiation with Several Wavelengths
Surface Modification of Glassy Carbon Using Pulsed KrF Excimer Laser(Surfaces, Interfaces, and Films)
Highly Oriented Graphite Layer Obtaind on WC-Co by Laser Modification : Surfaces, Interfaces, and Films
Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation
Striations on Si Trench Sidewalls Observed by Atomic Force Microscopy
Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
Light Emitting Properties of Linear π-Conjugated Poly(arylene)s
RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
Superconducting Bi_2Sr_2CaCu_2O_ Single Films Grown on SrTiO_3 Substrate by the Liquid Phase Epitaxial Method
Preparation of Single Crystals Containing the High-T_c (above 100 K) Phase of a Bi-Sr-Ca-Cu-O Superconductor
Synthesis and Decomposition of the High-T_c Phase of a Pb-Doped Bi-Sr-Ca-Cu-O Superconductor
A New Method for Improving the Superconducting Transition Temperature of Platy ErBa_2Cu_3O_ Single Crystals
Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
5. Resistance Characteristics of High Speed Hull Form with Air-ship Form Bulb
Excimer-Type Electroluminescence and Carrier-Transporting Properties of Electron-Accepting π-Conjugated Polymers
Texture Structure Analysis and Crystalline Quality Improvement of CeO_2(110) Layers Grown on Si(100) Substrates
Application of Multiple-Image Fourier Transform Spectral Imaging to Measurement of Fast Phenomena
Compact Spectral Imaging System Using Liquid Crystal for Fast Measurement
Interferometric Spectral Imaging and Optical Three-Dimensional Fourier Transformation

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