Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-12-15

著者

• Satoh Minoru

  Nagaoka University Of Technology

• YAMAMOTO Yasuhiro

  Department of Chemistry, Faculty of Science, Toho University

• Yokoyama Y

  Inst. For Materials Res. Tohoku Univ.

• Satoh M

  Tohoku Univ. Sendai Jpn

• Inoue T

  Tohoku Univ. Sendai Jpn

• Inoue T

  Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos

• Inoue Tatsuya

  Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect

• Inoue Tetsushi

  Research Laboratory Of Resources Utilization Tokyo Institute Of Technology

• Satoh Masaharu

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Yoshida Y

  Department Of Energy Engineering And Science Nagoya University

• Yamada Y

  Akita Univ. Akita Jpn

• Yamada Yuh

  National Research Institute For Metals

• Inoue Takahito

  Electrotechnical Laboratory

• Satoh M

  Department Of Physics Faculty Of Science Okayama University

• SATOH Masataka

  Research Center of Ion Beam Technology, Hosei University

• INOUE Tomoyasu

  Department of Electronic Engineering, Iwaki Meisei University

• Satoh Masataka

  Research Center Of Ion Beam Technology And College Of Engineering Hosei University

• Inoue T

  Applied Laser Engineering Research Institute

• Yokoyama Yoshihiko

  Superconductivity Research Laboratory, International Superconductivity Technology Center

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