YOSHIDA Masayuki | Kyushu Institute of Design
スポンサーリンク
概要
関連著者
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YOSHIDA Masayuki
Kyushu Institute of Design
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
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Yoshida Masayoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Yashiro M
Univ. Tokyo Tokyo
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Tomokage H
Fukuoka Univ. Fukuoka Jpn
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Tomokage Hajime
Department Of Electronics Fukuoka University
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Tomokage Hajime
Department Of Electronics Faculty Of Engineering Fukuoka University
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KITAGAWA Hajime
Department of Electronic Materials Engineering, Fukuoka Institute of Technology
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Kitagawa H
Canon Inc. Utsunomiya Jpn
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TOMOKAGE Hajime
Department of Electronics, Fukuoka University
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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NAKAMURA Kazutaka
Materials and Structures Laboratory, Tokyo Institute of Technology
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KONDO Ken-ichi
Materials and Structures Laboratory, Tokyo Institute of Technology
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Kondo K
Tokyo Inst. Technol. Yokohama Jpn
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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MOROOKA Masami
Department of Electrical Engineering, Fukuoka Institute of Technology
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Kondo K
Fujitsu Laboratories Ltd.
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Kondo Ken-ichi
Materials And Structures Laboratory Tokyo Institute Of Technology
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師岡 正美
福岡工業大学電気工学科
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Morooka Masami
Department Of Electrical Engineering Fukuoka Institute Of Technology
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Nakamura K
Materials And Structures Laboratory Tokyo Institute Of Technology
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YABUTA Hisato
Department of Quantum Matter, ADSM, Hiroshima University
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HASHIMOTO Kimio
Department of Pathology, Nishi-Kobe Medical Center
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YOSHIDA Masatake
National Institute of Advanced Industrial Science and technology (AIST) Tsukuba Central 5
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Komeya K
Graduate School Of Environment And Information Sciences Yokohama National Univ.
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YAMAMICHI Shintaro
Functional Materials Research Laboratories, NEC Corporation
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SONE Shuji
ULSI Device Development Laboratory, NEC Corporation
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Yabuta Hisato
Department Of Quantum Matter Adsm Hiroshima University
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Yoshida Masatake
National Chemical Laboratory For Industry Tsukuba Research Center
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Kitagawa Hajime
Department Of Electrical Engineering Kyushu University
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HIRONAKA Yoichiro
Materials and Structures Laboratory, Tokyo Institute of Technology
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Kondo K
Stanley Electric Co. Ltd. Yokohama Jpn
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TAKAHASHI Manabu
Fukuoka Institute of Technology
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Hashimoto Kimio
Department Of Electrical Engineering Kyushu University
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Hashimoto Kimio
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Fujimoto Yasushi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Yamamichi Shintaro
Functional Materials Research Laboratories Nec Corporation
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Yamamichi Shintaro
Fundamental Research Laboratories Nec Corporation
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Sone S
Ulsi Device Development Laboratory Nec Corporation
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Kato Y
Ulsi Device Development Laboratory Nec Corporation:(present Address)advanced Process R&d And Str
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YASHIRO Morio
Department of Applied Chemistry, Faculty of Engineering, Tokyo Institute of Polytechnics
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Fujimoto Y
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present)mats
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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ARITA Koji
ULSI Device Development Laboratory, NEC Corporation
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KATO Yoshitake
ULSI Device Development Laboratory, NEC Corporation
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YABUTA Hisato
Fundamental Research Laboratories, NEC Corporation
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YOSHIDA Masaji
Fundamental Research Laboratories, NEC Corporation
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Kitagawa Hajime
Deportment Of Information Electronics Fukuoka Institute Of Technology
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Kitagawa Hajime
Production-systems Engineering Toyohashi University Of Technology
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YOSHIDA Masayuki
Yoshida Semiconductor Laboralory
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KOMIYAMA Makoto
Department of Chemistry and Biotechnology, Graduate School of Engineering, The University of Tokyo
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Miyake K
Institute Of Applied Physics Crest Japan Science And Technology Corporation (jst) University Of Tsuk
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Komiyama Makoto
Department Of Chemistry And Biotechnology Graduate School Of Engineering The University Of Tokyo
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Arita K
Waseda Univ. Tokyo Jpn
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Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
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Komiyama M
Research Center For Advanced Science And Technology The University Of Tokyo
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Arita K
Ulsi Device Development Laboratory Nec Corporation
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Suzuki Y
Showa Shell Sekiyu K.k. Kanagawa
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YOSHIDA Masaaki
Department of Electrical and Computer Engineering, Hachinohe National College of Technology
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Yoshida Masaaki
Department Of Electrical And Computer Engineering Hachinohe National College Of Technology
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Suzuki Y
Hitachi Ltd. Tokyo Jpn
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Inoue T
Tohoku Univ. Sendai Jpn
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Inoue T
Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos
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Inoue Tatsuya
Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect
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Inoue Tetsushi
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Suzuki Y
Optoelectronic Division Electrotechnical Laboratory
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Higuchi Maiko
Department of Pharmacy, Kumamoto University Hospital
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SUZUKI Yoshifumi
Department of Internal Medicine, Social Insurance Chuo General Hospital
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IIZUKA Toshihiro
ULSI Device Development Laboratory, NEC Corporation
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YAMAGUCHI Hiromu
ULSI Device Development Laboratory, NEC Corporation
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AKAHANE Reiko
Fundamental Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
Fundamental Research Laboratories, NEC Corporation
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Inoue Takahito
Electrotechnical Laboratory
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KAMIURA Yoichi
Faculty of Engineering, Okayama University
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TSURUNO Reiji
Kyushu Institute of Design
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Tsuruno Reiji
Department Of Visual Communication Design Kyushu Institute Of Design
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SUZUKI Yoshifumi
NTT Electrical Communications Laboratories
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Suzuki Yoshiichi
Central Research And Development Laboratory Showa Shell Sekiyu K.k.
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Suzuki Yoshifumi
Department Of Materials Science Faculty Of Engineering Kyushu Institute Of Technology
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Suzuki Yoshishige
Joint Research Center For Atom Technology(jrcat)-national Institute For Advanced Interdisciplinary R
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Suzuki Yasuzou
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology
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Tange Tomoyuki
Materials and Structures Laboratory, Tokyo Institute of Technology
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Inoue Tomoharu
Materials and Structures Laboratory, Tokyo Institute of Technology
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CHIKAURA Yoshinori
Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology
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KII Hideki
Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology
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Matsumoto Satoru
Department Of Electrical Engineering Faculty Of Engineering Keio University
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Higuchi Maiko
Department Of Chemistry And Biotechnology Graduate School Of Engineering The University Of Tokyo
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Akahane Reiko
Fundamental Research Laboratories Nec Corporation:(present Address)functional Materials Laboratories
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Ohmori Y
Center For Advanced Science And Innovation (casi) Osaka University
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Ohmori Yutaka
Faculty Of Engineering Osaka University
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Tange Tomoyuki
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kamiura Y
Graduate School Of Natural Science And Technology Okayama University
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Kamiura Yoichi
Faculty Of Engineering Okayama University
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NIIMI Tatsuya
Department of Electrical Engineering, Faculty of Engineering, Keio University
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Niimi Tatsuya
Department Of Applied Physics Tokai University
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Niimi Tatsuya
Department Of Electrical Engineering Faculty Of Engineering Keio University
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Yamaguchi H
Ntt Basic Research Laboratories
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Kii Hideki
Department Of Materials Science Faculty Of Engineering Kyushu Institute Of Technology
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FUJII Akihiko
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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YOSHINO Katsumi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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重川 秀実
筑波大学物理工学系
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Kondo K
Kyoto Univ. Kyoto Jpn
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重川 秀実
Univ. Tsukuba Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And Crest Japan Science And Technology Corporation (jst) University Of
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TAKEDA Naoya
Department of Neurosurgery, Nishi-Kobe Medical Center
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Yoshida Masayuki
Department of Surgery, Kanazawa University School of Medicine
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Yoshida Masayoshi
Department of Cardiovascular Medicine, Kyushu University
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Ueno Hideki
Laboratory Of Biology Faculty Of Education Niigata University
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Ueno Hideki
Department Of Electrical Engineering Faculty Of Engineering Himeji Of Technology
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Ueno Hideki
Osaka R&d Laboratories Sumitomo Electric Industries Ltd.
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Fujii Akihiko
Faculty Of Engineering Keio University
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Fujii Akihiko
Department Of Electrical Electronic And Informational Engineering Osaka University
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Ueno H
Himeji Inst. Technol. Himeji Jpn
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Matsuki T
Ulsi Device Development Laboratory Nec Corporation
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YOSHINO Katsumi
Faculty of Engineering, Osaka University
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MOROOKA Masami
Fukuoka Institute of Technology
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Yoshino Katsumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Yoshino Katsumi
Faculty Of Engineering Osaka University
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KATAYAMA Masahide
CRC Solutions Corp.
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Arai Eisuke
Ntt Lsi Laboratories
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YAMAMOTO Ichiro
ULSI Device Development Laboratory, NEC Corporation
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MATSUKI Takeo
ULSI Device Development Laboratory, NEC Corporation
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YABUTA Hisato
Functional Materials Research Laboratories, NEC Corporation
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MIYASAKA Yoichi
Functional Materials Research Laboratories, NEC Corporation
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SONE Shuji
Fundamental Research Laboratories, NEC Corporation
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KATO Yoshitake
Fundamental Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
ULSI Device Development Laboratories, NEC Corporation
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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NISHIMOTO Shozo
ULSI Device Development Laboratories, NEC Corporation
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OHMORI Yutaka
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Wakabayashi Kunihiko
Materials And Structures Laboratory Tokyo Institute Of Technology
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TAKENAKA Hisataka
NTT Advanced Technology Corporation
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TOMOKAGE Hajime
Depratment of Electronics, Fukuoka University
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MIYAMOTO Tokuo
Department of Electronics, Faculty of Engineering, Fukuoka University
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Hirota Shouichi
Department of Electronics, Fukuoka University
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SUMAOKA Jun
Department of Chemistry and Biotechnology, Graduate School of Engineering, The University of Tokyo
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OHMORI Yutaka
Faculty of Engineering, Osaka University
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ISHII Youichi
Department of Chemistry and Biotechnology, Graduate School of Technology, The University of Tokyo
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KAKIMOTO Masaya
Osaka R & D Laboratories, Sumitomo Electric Industries, Ltd.
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KOJIMA Hiroyuki
Osaka R & D Laboratories, Sumitomo Electric Industries, Ltd.
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Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Takenaka Hisataka
Ntt Advanced Technology Corp.
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Yamamichi Shintaro
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Kondo Kunitaka
Institute Of Physics University Of Tsukuba
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Yoshida Masayuki
Department Of Biochemistry And Integrative Medical Biology School Of Medicine Keio University
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Yoshida Masayuki
Kyushu Institute Of Design:(present Address)yoshida Semiconductor Laboratory
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Yoshida Masayuki
Kyushu Institute-of Design
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Yoshida Masayuki
Electrical Communication Laboratory
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Yoshida Masataka
National Institute of Materials and Chemical Research
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MORITOH Tatsumi
Materials and Structures Laboratory, Tokyo Institute of Technology
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MATSUOKA Shohei
Materials and Structures Laboratory, Tokyo Institute of Technology
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OGURA Toshiyuki
Materials and Structures Laboratory, Tokyo Institute of Technology
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HATTORI Shyuhei
Materials and Structures Laboratory, Tokyo Institute of Technology
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KOZU Naoshi
School of Engineering, Tokyo University
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TANAKA Kazuo
Faculty of Engineering and Institute of Laser Engineering, Osaka University
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OZAKI Norimasa
Faculty of Engineering and Institute of Laser Engineering, Osaka University
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SASATANI Yasufumi
Faculty of Engineering and Institute of Laser Engineering, Osaka University
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OHTANI Masayuki
Deportment of Earth and Space Science, Graduate School of Science, Osaka University
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TSUNEMI Hiroshi
Deportment of Earth and Space Science, Graduate School of Science, Osaka University
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NOVIKOV Dmitri
Hamburger Syncrotron-Strahrungs Labor. Deutches Electronen-Synchrotron
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MATERLIK Gerhard
Hamburger Syncrotron-Strahrungs Labor. Deutches Electronen-Synchrotron
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HIRONAKA Yasuhisa
Faculty of Engineering, Osaka University
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YOSHIDA Masayoshi
Faculty of Engineering, Osaka University
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YOSHIMOTO Kenji
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Lesaicherre P‐y
Ulsi Device Development Laboratories Nec Corporation
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Kozu Naoshi
School Of Engineering Tokyo University
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Sumaoka Jun
Department Of Chemistry And Biotechnology Graduate School Of Engineering The University Of Tokyo
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Ueta Hiroshi
The Department Of Electronic Engineering Osaka University
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Ishii Youichi
Department Of Applied Chemistry Faculty Of Engineering Chuo University
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Ishii Youichi
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Takenaka H
Ntt Advanced Technology Corp.
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Matsumoto S
Ntt Telecommunications Energy Laboratories
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Ohmori Yutaka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Ozaki Norimasa
Faculty Of Engineering And Institute Of Laser Engineering Osaka University
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Miyamoto T
Tokyo Inst. Technol. Tokyo Jpn
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Miyamoto Tokuo
Department Of Electronics Engineering And Computer Science Faculty Of Engineering Fukuoka University
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Kondo Ken'ichi
Broadcasting Science Research Laboratories Of Nippon Hoso Kyokai:(present Address) Moririka Electron
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Kato Yoshitake
Fundamental Research Laboratories Nec Corporation
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Yoshida Masayoshi
Department Of Cardiovascular Medicine Graduate School Of Medical Sciences Kyushu University
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Hattori Shyuhei
Materials And Structures Laboratory Tokyo Institute Of Technology
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Moritoh Tatsumi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Matsuoka Shohei
Materials And Structures Laboratory Tokyo Institute Of Technology
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Tsunemi Hiroshi
Deportment Of Earth And Space Science Graduate School Of Science Osaka University
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WASHIZU Yusuke
Department of Chemistry and Biotechnology, Graduate School of Engineering, The University of Tokyo
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Takeda N
Kyushu Univ. Fukuoka
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Takeda Naoya
Department Of Materials Science And Technology Faculty Of Engineering Niigata University
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Hirota Shouichi
Department Of Electronics Fukuoka University
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Washizu Y
Nagoya Univ. Aichi
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Ohtani Masayuki
Deportment Of Earth And Space Science Graduate School Of Science Osaka University
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Sasatani Yasufumi
Faculty Of Engineering And Institute Of Laser Engineering Osaka University
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Kojima Hiroyuki
Osaka Natl. Res. Inst.
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IMAI Takamitsu
Department of Chemistry and Biotechnology, Graduate School of Engineering, University of Tokyo
著作論文
- Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Effect of Polishing on Time Dependence of Average Substitutional Impurity Concentration in Dissociative and Kick-Out Mechanisms
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
- Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
- Spall behavior of steels under hypervelocity impact
- Laser-Induced Shock Compression of Tantalum to 1.7 TPa
- Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
- X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Enhancement of Electroluminescence Intensity from Dye-Doped Poly(3-Alkylthiophene) Light Emitting Diode with Different Alkyl-Side-Chain Length
- Electroluminescent Diodes Utilizing Polysilanes
- In-Diffusion and Annealing of Copper in Germanium
- Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
- Diffusion Mechanism of Nickel and Point Defects in Silicon
- Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
- The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus
- Hydrolysis of Diribonucleoside Monophosphate Diesters Assisted by a Manganese(II) Complex
- Effect of Alkaline Earth Metal Ions on the Phosphodiester Hydrolysis of RNA
- On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
- Unprecedentedly Fast DNA Hydrolysis by the Synergism of the Cerium(IV)-Praseodymium(III)and the Cerium(IV)-Neodymium(III)Combinations^1
- Dinulear Lanthanum (III) Complex for Efficient Hydrolysis of RNA
- Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
- Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
- Analysis of Oxidation Enhanced and Retarded Diffusions and Growth of Oxidation Stacking Fault in Silicon : Semiconductors and Semiconductor Devices
- Decrease in Quasi Vacancy Formation Energy in the Study of Pair Diffusion Model of Group V Impurities in Silicon
- Diffusion of Phosphorus in Silicon
- General Theory of Phosphorus and Arsenic Diffusions in Silicon
- Components of Chemical Reactions in Solids
- Chemical Potential of Impurity-Vacancy Pairs in Solids
- Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies