On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-09-15
著者
-
KITAGAWA Hajime
Department of Electronic Materials Engineering, Fukuoka Institute of Technology
-
Kitagawa H
Canon Inc. Utsunomiya Jpn
-
Kitagawa Hajime
Deportment Of Information Electronics Fukuoka Institute Of Technology
-
Kitagawa Hajime
Production-systems Engineering Toyohashi University Of Technology
-
YOSHIDA Masayuki
Kyushu Institute of Design
-
Yoshida Masayuki
Kyushu Institute-of Design
-
Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
関連論文
- Force-Displacement Characteristics of Fluxoid Lattice and Pinning Potential in Y-Ba-Cu-O Bulk Superconductor
- Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Effect of Polishing on Time Dependence of Average Substitutional Impurity Concentration in Dissociative and Kick-Out Mechanisms
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
- Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
- Spall behavior of steels under hypervelocity impact
- Laser-Induced Shock Compression of Tantalum to 1.7 TPa
- Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
- X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Enhancement of Electroluminescence Intensity from Dye-Doped Poly(3-Alkylthiophene) Light Emitting Diode with Different Alkyl-Side-Chain Length
- Electroluminescent Diodes Utilizing Polysilanes
- In-Diffusion and Annealing of Copper in Germanium
- Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
- Diffusion Mechanism of Nickel and Point Defects in Silicon
- Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
- Diffusion and Electrical Properties of Iron-Related Defects in N-Type Silicon Grown by Czochralski- and Floating Zone Method
- Iron-Related Donor Level in N-Type Silicon
- Solid Solubility of Cobalt in Silicon
- The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
- In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
- Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus
- Diffusion Coefficient of Cobalt in Silicon
- Hydrolysis of Diribonucleoside Monophosphate Diesters Assisted by a Manganese(II) Complex
- Effect of Alkaline Earth Metal Ions on the Phosphodiester Hydrolysis of RNA
- On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
- Energy Levels and Solubility of Electrically Active Cobalt in Silicon Studied by Combined Hall and DLTS Measurements
- Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
- Unprecedentedly Fast DNA Hydrolysis by the Synergism of the Cerium(IV)-Praseodymium(III)and the Cerium(IV)-Neodymium(III)Combinations^1
- Distribution of Electrically Active Nickel Atoms in Dislocation-Free N-and P-Type Silicon Crystals Measured by Deep Level Transient Spectroscopy
- A Study of Liquid Dispensing Head Using Fluidic Inertia
- Dinulear Lanthanum (III) Complex for Efficient Hydrolysis of RNA
- Interference-Term Elimination for Wigner Distribution Using a Frequency Domain Adaptive Filter
- Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
- In-Diffusion and Isothermal Annealing of Iron-Related Defects in Czochralski N-Type Silicon
- Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
- Analysis of Oxidation Enhanced and Retarded Diffusions and Growth of Oxidation Stacking Fault in Silicon : Semiconductors and Semiconductor Devices
- Decrease in Quasi Vacancy Formation Energy in the Study of Pair Diffusion Model of Group V Impurities in Silicon
- Diffusion of Phosphorus in Silicon
- General Theory of Phosphorus and Arsenic Diffusions in Silicon
- Components of Chemical Reactions in Solids
- Chemical Potential of Impurity-Vacancy Pairs in Solids
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- Majority-Carrier Capture Cross Section of Amphoteric Nickel Center in Silicon Studied by Isothermal Capacitance Transient Spectroscopy
- In-Diffusion and Isothermal Annealing of Iron-Related Defects in n-Type Silicon
- Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies