Analysis of Oxidation Enhanced and Retarded Diffusions and Growth of Oxidation Stacking Fault in Silicon : Semiconductors and Semiconductor Devices
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In order to determine the fractional components of the interstitialcy mechanism for Sb, P and self-diffusions, d^<Sb>_I, d^P_I and d^<sd>_I, and the supersaturation ratios of vacancies and self-interstitials, s_V and s_I, from the experimental results of the oxidation-enhanced diffusion (OED) of P, oxidation-retarded diffusion (ORD) of Sb and growth of the interstitial-type stacking fault by oxidation (OSF), the equations of OED, ORD and OSF and of the special relation between s_V and s_I were solved simultaneously. The effect of the stacking fault energy upon growth of the OSF was taken into account in the OSF equation. As the experimental results of OED, ORD and OSF did not satisfy their equations exactly, nine kinds of solutions were obtained and three of them were shown. The errors caused by the lack of exact satisfaction were shown. A d^<sd>_I much smaller than 0.5 was obtained.
- 社団法人応用物理学会の論文
- 1988-06-20
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